Transferred-substrate HBTs with 254 GHz fτ

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Dept. of Elec. and Comp. Engineering, University of California, Santa Barbara, CA 93106, United States [1 ]
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Electron. Lett. | / 7卷 / 605-606期
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Capacitance - Computational methods - Lithography - Molecular beam epitaxy - Semiconductor device models - Semiconductor growth - Silicon wafers - Substrates;
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摘要：
Advances in device technology for heterojunction bipolar transistors (HBT) are necessary to further improve the performance of associated high speed analogue and digital circuitry. The transferred-substrate process has yielded a HBT device with record current gain cutoff frequency fτ of 254 GHz. The acquisition of a stepper alignment tool allows for a reduction in the base size and all alignment tolerances. With this lithographic capability the frequency performance of transferred-substrate HBT are increased dramatically.
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