Effects of helicon-wave-plasma etching on the charging damage of aluminum interconnects

被引：0
|
作者：
Lin, W. [1 ]
Kang, T.-K. [1 ]
Perng, Y.-Ch. [1 ]
Dai, B.-T. [1 ]
Cheng, H.-Ch. [1 ]
机构：
[1] Natl Chiao Tung Univ, Hsinchu, Taiwan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1998年 / 37卷 / 07期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：3867 / 3870
相关论文
共 50 条
  • [31] Design and simulation of a micromechanical sensor for detection of charging damage during plasma etching
    Ganesh, S
    Chamarti, S
    Misra, D
    PROCEEDINGS OF THE ELEVENTH INTERNATIONAL SYMPOSIUM ON PLASMA PROCESSING, 1996, 96 (12): : 178 - 184
  • [32] Prediction of plasma charging damage during SiO2 etching by VicAddress
    Yagisawa, T
    Ohmori, T
    Shimada, T
    Makabe, T
    2003 8TH INTERNATIONAL SYMPOSIUM ON PLASMA- AND PROCESS-INDUCED DAMAGE, 2003, : 97 - 99
  • [33] Plasma charging induced gate oxide damage during metal etching and ashing
    Lin, HC
    Perng, CH
    Chien, CH
    Chiou, SG
    Chang, TF
    Huang, TY
    Chang, CY
    1996 1ST INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE, 1996, : 113 - 116
  • [34] Plasma charging damage during over-etch time of aluminum
    Shin, H
    Park, G
    Hu, CM
    SOLID-STATE ELECTRONICS, 1998, 42 (06) : 911 - 913
  • [35] Effects of matching network on mode transitions in a helicon wave plasma source
    Hu, Yibo
    Ji, Peiyu
    Yang, Jiaqi
    Jin, Chenggang
    Zhuge, Lanjian
    Wu, Xuemei
    JOURNAL OF APPLIED PHYSICS, 2020, 128 (04)
  • [36] Dry etching of platinum films with TiN masks in an Ar/O2 helicon wave plasma
    Chiang, MC
    Pan, FM
    Cheng, HC
    Liu, JS
    Chan, SH
    Wei, TC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2000, 18 (01): : 181 - 187
  • [37] Evaluation of plasma charging damage during polysilicon gate etching process in a decoupled plasma source reactor
    Ma, SM
    Jain, M
    Chinn, JD
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1998, 16 (03): : 1440 - 1443
  • [38] Aluminum etch and after-corrosion characteristics in a m = 0 helicon wave plasma etcher
    Ha, JH
    Yim, MH
    Kim, JJ
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (12B): : 6928 - 6933
  • [39] Correlation between electron temperature uniformity and charging damage in high density plasma etching tool
    Tokashiki, K
    Noguchi, K
    Miyamoto, H
    Horiuchi, T
    1997 2ND INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE, 1997, : 207 - 210
  • [40] Si oxynitridation with helicon-wave excited nitrogen plasma: Effects of plasma divergence and concentration on substrates
    Kimura, S
    Ito, T
    Tabakomori, M
    Okamoto, Y
    Ikoma, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1997, 36 (3B): : L316 - L319
12345