Plasma charging induced gate oxide damage during metal etching and ashing

被引：0
|
作者：
Lin, HC [1 ]
Perng, CH [1 ]
Chien, CH [1 ]
Chiou, SG [1 ]
Chang, TF [1 ]
Huang, TY [1 ]
Chang, CY [1 ]
机构：
[1] NATL NANO DEVICE LAB,HSINCHU,TAIWAN
来源：
1996 1ST INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE | 1996年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：113 / 116
页数：4
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