Plasma charging induced gate oxide damage during metal etching and ashing

被引：0

作者：

Lin, HC ^{[1
]}

Perng, CH ^{[1
]}

Chien, CH ^{[1
]}

Chiou, SG ^{[1
]}

Chang, TF ^{[1
]}

Huang, TY ^{[1
]}

Chang, CY ^{[1
]}

机构：

[1] NATL NANO DEVICE LAB,HSINCHU,TAIWAN

来源：

1996 1ST INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE | 1996年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：113 / 116

页数：4

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