Development of terahertz frequency solid state multiply sources and sensors with Schottky barrier diodes

被引:0
|
作者
机构
[1] [1,Yao, Chang-Fei
[2] Zhou, Ming
[3] Luo, Yun-Sheng
[4] Xu, Cong-Hai
[5] Kou, Ya-Nan
[6] Chen, Yi-Gang
来源
Yao, C.-F. (yaocf1982@163.com) | 1600年 / Chinese Institute of Electronics卷 / 41期
关键词
Circuit simulation - Diodes - Mixers (machinery) - Gallium arsenide - III-V semiconductors - Schottky barrier diodes - Frequency doublers;
D O I
10.3969/j.issn.0372-2112.2013.03.004
中图分类号
学科分类号
摘要
Terahertz solid state frequency multiplying sources and sensors are developed with GaAs Schottky barrier diodes and hybrid integrated circuit process. Based on physical structure of diode, high efficiency multipliers, and high sensitivity sensors, such as detectors and subharmonic mixers (SHM) are developed with the combination of electromagnetic (EM) full-wave tool and circuit simulation tool. To the 0.15THz detector, highest measured voltage sensitivity is 1600mV/mW, typical sensitivity is 600mV/mW in 0.11~0.17THz, and tangential signal sensitivity (TSS) is superior than -29dBm. To the 0.15THz frequency doubler, highest measured multiply efficiency is 7.5%, and typical efficiency is 6.0% in 0.1474~0.152THz. To the 0.18THz frequency doubler, highest measured multiply efficiency is 14.8%, and typical efficiency is 8.0% in 0.15~0.2THz. To the 0.15THz SHM, lowest measured conversion loss is 10.7dB, and typical conversion loss is 12.5dB in 0.135~0.165THz. To the 0.18THz SHM, lowest measured conversion loss is 5.8dB, and typical conversion loss is 13.5dB and 11.5dB in 0.165~0.2THz and 0.21~0.24THz, respectively.
引用
收藏
相关论文
共 50 条
  • [41] GAAS SCHOTTKY-BARRIER DIODES FOR ULTRAHIGH-FREQUENCY COMMUNICATION SYSTEMS
    SATO, Y
    IDA, M
    UCHIDA, M
    SHIMADA, K
    ELECTRONICS & COMMUNICATIONS IN JAPAN, 1973, 55 (01): : 82 - 88
  • [42] A new approach to the optimization of resistive frequency converters based on Schottky barrier diodes
    Yu. A. Nemlikher
    I. A. Strukov
    Journal of Communications Technology and Electronics, 2009, 54 : 218 - 224
  • [43] FABRICATION AND ANALYSIS OF GAAS SCHOTTKY-BARRIER DIODES FABRICATED ON THIN MEMBRANES FOR TERAHERTZ APPLICATIONS
    SEIDEL, LK
    CROWE, TW
    INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, 1989, 10 (07): : 779 - 787
  • [44] Infrared frequency conversion by means of GaAs and InP Schottky-Barrier diodes
    Bozhkov, VG
    Zakharyash, VF
    Klementev, VM
    Malakhovskii, OY
    Timchenko, BA
    Chepurov, SV
    RADIOTEKHNIKA I ELEKTRONIKA, 1997, 42 (05): : 631 - 634
  • [45] LOW-FREQUENCY NOISE IN IDEAL GAAS SCHOTTKY-BARRIER DIODES
    SISSON, MJ
    HANSOM, AM
    GRANT, AJ
    WHITE, AM
    DAY, B
    ELECTRONICS LETTERS, 1978, 14 (20) : 662 - 663
  • [46] Development of nuclear microbattery prototype based on Schottky barrier diamond diodes
    Bormashov, Vitaly
    Troschiev, Sergey
    Volkov, Alexander
    Tarelkin, Sergey
    Korostylev, Eugeniy
    Golovanov, Anton
    Kuznetsov, Mikhail
    Teteruk, Dmitry
    Kornilov, Nikolay
    Terentiev, Sergey
    Buga, Sergey
    Blank, Vladimir
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2015, 212 (11): : 2539 - 2547
  • [47] High-Frequency Multiplier Based on GaN Planar Schottky Barrier Diodes
    Feng, Z. H.
    Liang, S. X.
    Xing, D.
    Wang, J. L.
    Yang, D. B.
    Fang, Y. L.
    Zhang, L. S.
    Zhao, X. Y.
    2016 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ADVANCED MATERIALS AND PROCESSES FOR RF AND THZ APPLICATIONS (IMWS-AMP), 2016,
  • [48] DISCRETE SCHOTTKY DIODES BASED TERAHERTZ FREQUENCY DOUBLER FOR PLANETARY SCIENCE AND REMOTE SENSING
    Yang, F.
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2017, 59 (04) : 966 - 970
  • [49] Solid-state terahertz sources for space applications
    Maiwald, F
    Pearson, JC
    Ward, JS
    Schlecht, E
    Chattopadhyay, G
    Gill, J
    Ferber, R
    Tsang, R
    Lin, R
    Peralta, A
    Finamore, B
    Chun, W
    Baker, JJ
    Dengler, RJ
    Javadi, H
    Siegel, P
    Mehdi, I
    CONFERENCE DIGEST OF THE 2004 JOINT 29TH INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 12TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS, 2004, : 767 - 768
  • [50] Electrical Defect State Distribution in Single Crystal ZnO Schottky Barrier Diodes
    Park, Jinhee
    Rim, You Seung
    Senanayake, Pradeep
    Wu, Jiechen
    Streit, Dwight
    COATINGS, 2020, 10 (03)