Development of terahertz frequency solid state multiply sources and sensors with Schottky barrier diodes

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作者
机构
[1] [1,Yao, Chang-Fei
[2] Zhou, Ming
[3] Luo, Yun-Sheng
[4] Xu, Cong-Hai
[5] Kou, Ya-Nan
[6] Chen, Yi-Gang
来源
Yao, C.-F. (yaocf1982@163.com) | 1600年 / Chinese Institute of Electronics卷 / 41期
关键词
Circuit simulation - Diodes - Mixers (machinery) - Gallium arsenide - III-V semiconductors - Schottky barrier diodes - Frequency doublers;
D O I
10.3969/j.issn.0372-2112.2013.03.004
中图分类号
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摘要
Terahertz solid state frequency multiplying sources and sensors are developed with GaAs Schottky barrier diodes and hybrid integrated circuit process. Based on physical structure of diode, high efficiency multipliers, and high sensitivity sensors, such as detectors and subharmonic mixers (SHM) are developed with the combination of electromagnetic (EM) full-wave tool and circuit simulation tool. To the 0.15THz detector, highest measured voltage sensitivity is 1600mV/mW, typical sensitivity is 600mV/mW in 0.11~0.17THz, and tangential signal sensitivity (TSS) is superior than -29dBm. To the 0.15THz frequency doubler, highest measured multiply efficiency is 7.5%, and typical efficiency is 6.0% in 0.1474~0.152THz. To the 0.18THz frequency doubler, highest measured multiply efficiency is 14.8%, and typical efficiency is 8.0% in 0.15~0.2THz. To the 0.15THz SHM, lowest measured conversion loss is 10.7dB, and typical conversion loss is 12.5dB in 0.135~0.165THz. To the 0.18THz SHM, lowest measured conversion loss is 5.8dB, and typical conversion loss is 13.5dB and 11.5dB in 0.165~0.2THz and 0.21~0.24THz, respectively.
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