Electrical Defect State Distribution in Single Crystal ZnO Schottky Barrier Diodes

被引：12
|
作者：
Park, Jinhee [1 ]
Rim, You Seung [2 ]
Senanayake, Pradeep [3 ]
Wu, Jiechen [1 ]
Streit, Dwight [1 ]
机构：
[1] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA
[2] Sejong Univ, Sch Intelligent Mechatron Engn, Seoul 05006, South Korea
[3] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
来源：
COATINGS | 2020年 / 10卷 / 03期
基金：
新加坡国家研究基金会;
关键词：
Zinc oxide; Schottky Barrier Diode; DLTS; defect analysis;
D O I：
10.3390/coatings10030206
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The characterization of defect states in a hydrothermally grown single crystal of ZnO was performed using deep-level transient spectroscopy in the temperature range of 77-340 K. The native intrinsic defect energy level within the ZnO band gap occurred in the depletion region of ZnO Schottky barrier diodes. A major defect level was observed, with a thermal activation energy of 0.27 eV (E3) within the defect state distribution from 0.1 to 0.57 eV below the conduction band minimum. We confirmed the maximum defect concentration to be 3.66 x 10(16) cm(-3) at 0.27 eV (E3). As a result, we clearly confirmed the distribution of density of defect states in the ZnO band gap.
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页数：9
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