Analytical modeling and simulation of workfunction engineered gate junctionless high-k dielectric Double Gate MOSFET: A comparative study

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作者：
Dept. of Electronics and Telecommunication Engineering, Jadavpur University, India [1 ]
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IET Conf Publ | / CP683卷 / 428-432期
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Engineering Village;
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摘要：
Analytical calculation - Double gate MOSFET - Effective oxide thickness - Junctionless - Model and simulation - Simplified expressions - Telecommunication engineering - Work function engineerings
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