W versus Co-al as gate fill-metal for aggressively scaled replacement high-k/metal gate devices for (sub-)22nm technology nodes

被引：0

作者：

Veloso, Anabela ^{[1
]}

Chew, Soon Aik ^{[1
]}

Schram, Tom ^{[1
]}

Dekkers, Harold ^{[1
]}

Van Ammel, Annemie ^{[1
]}

Witters, Thomas ^{[1
]}

Tielens, Hilde ^{[1
]}

Heylen, Nancy ^{[1
]}

Devriendt, Katia ^{[1
]}

Sebaai, Farid ^{[1
]}

Brus, Stephan ^{[1
]}

Ragnarsson, Lars-Ake ^{[1
]}

Pantisano, Luigi ^{[1
]}

Eneman, Geert ^{[1
]}

Carbonell, Laure ^{[1
]}

Richard, Olivier ^{[1
]}

Favia, Paola ^{[1
]}

Geypen, Jef ^{[1
]}

Bender, Hugo ^{[1
]}

Higuchi, Yuichi ^{[2
]}

Phatak, Anup ^{[3
]}

Thean, Aaron ^{[1
]}

Horiguchi, Naoto ^{[1
]}

机构：

[1] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

[2] Assignee at IMEC from Panasonic, Kapeldreef 75, B-3001 Leuven, Belgium

[3] Assignee at IMEC from Applied Materials Belgium NV, Kapeldreef 75, B-3001 Leuven, Belgium

来源：

Japanese Journal of Applied Physics | 2013年 / 52卷 / 4 PART 2期

关键词：

Bias temperature instability - Comprehensive evaluation - Gate resistance - High-k/metal gates - Intrinsic stress - Low threshold voltage - Materials selection - Technology nodes;

D O I：

04CA03

中图分类号：

学科分类号：

摘要：

引用

共 36 条

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