Photoluminescence study of defect-free epitaxial silicon films grown at low temperatures by atmospheric pressure plasma chemical vapor deposition

被引：0
|
作者：
Yasutake, Kiyoshi [1 ]
Tawara, Naotaka [1 ]
Ohmi, Hiromasa [1 ]
Terai, Yoshikazu [2 ]
Kakiuchi, Hiroaki [1 ]
Watanabe, Heiji [1 ]
Fujiwara, Yasufumi [2 ]
机构：
[1] Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
[2] Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2007年 / 46卷 / 4 B期
关键词：
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摘要：
Journal article (JA)
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页码：2510 / 2515
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