Photoluminescence study of defect-free epitaxial silicon films grown at low temperatures by atmospheric pressure plasma chemical vapor deposition

被引：0
|
作者：
Yasutake, Kiyoshi [1 ]
Tawara, Naotaka [1 ]
Ohmi, Hiromasa [1 ]
Terai, Yoshikazu [2 ]
Kakiuchi, Hiroaki [1 ]
Watanabe, Heiji [1 ]
Fujiwara, Yasufumi [2 ]
机构：
[1] Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
[2] Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2007年 / 46卷 / 4 B期
关键词：
28;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
页码：2510 / 2515
相关论文
共 50 条
  • [21] Photoluminescence of amorphous Si films prepared by atmospheric pressure chemical vapor deposition
    Liu, Yong
    Xiao, Ying
    Wo, Yinhua
    Song, Chenlu
    Han, Gaorong
    Zhenkong Kexue yu Jishu Xuebao/Vacuum Science and Technology, 2004, 24 (06): : 469 - 471
  • [22] Silicon nitride films deposited by atmospheric pressure chemical vapor deposition
    Lin, X
    Endisch, D
    Chen, XM
    Kaloyeros, A
    Arkles, B
    CHEMICAL ASPECTS OF ELECTRONIC CERAMICS PROCESSING, 1998, 495 : 107 - 112
  • [23] Low-pressure chemical vapor deposition of GaN epitaxial films
    Topf, M
    Steude, G
    Fischer, S
    Kriegseis, W
    Dirnstorfer, I
    Meister, D
    Meyer, BK
    JOURNAL OF CRYSTAL GROWTH, 1998, 189 : 330 - 334
  • [24] Visible photoluminescence from SiOx films grown by low temperature plasma enhanced chemical vapor deposition
    Bilkent Univ, Ankara, Turkey
    Solid State Commun, 7 (443-447):
  • [25] Photoluminescence of silicon nanowires obtained by epitaxial chemical vapor deposition
    Demichel, O.
    Oehler, F.
    Calvo, V.
    Noe, P.
    Pauc, N.
    Gentile, P.
    Ferret, P.
    Baron, T.
    Magne, N.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2009, 41 (06): : 963 - 965
  • [26] Gas collisions and pressure quenching of the photoluminescence of silicon nanopowder grown by plasma-enhanced chemical vapor deposition
    Roura, P
    Costa, J
    Morante, JR
    Bertran, E
    JOURNAL OF APPLIED PHYSICS, 1997, 81 (07) : 3290 - 3293
  • [27] Low pressure chemical vapor deposition of epitaxial silicon-germanium, epitaxial silicon and poly-silicon
    Lee, IMR
    Neudeck, GW
    Takoudis, CG
    PROCEEDINGS OF THE THIRTEENTH INTERNATIONAL CONFERENCE ON CHEMICAL VAPOR DEPOSITION, 1996, 96 (05): : 107 - 112
  • [28] Ammonia-free deposition of silicon nitride films using pulsed-plasma chemical vapor deposition under near atmospheric pressure
    Matsumoto, M.
    Inayoshi, Y.
    Murashige, S.
    Suemitsu, M.
    Nakajima, S.
    Uehara, T.
    Toyoshima, Y.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2009, 27 (01): : 223 - 225
  • [29] ELECTRICAL CHARACTERIZATION OF EPITAXIAL SILICON DEPOSITED AT LOW TEMPERATURES BY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION.
    Burger, W.R.
    Reif, Rafael
    Electron device letters, 1985, EDL-6 (12): : 652 - 654
  • [30] Photoluminescence of plasma enhanced chemical vapor deposition amorphous silicon oxide with silicon nanocrystals grown at different fluence ratios and substrate temperatures
    Lin, CJ
    Lin, CK
    Chang, CW
    Chueh, YL
    Kuo, HC
    Diau, EWG
    Chou, LJ
    Lin, GR
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (2A): : 1040 - 1043
12345