Effect of N2 gas pressure ratio and DC bias on formation of iron nitride thin film by RF sputtering method

被引：0
|
作者：
Seki, Takahiro [1 ]
Niizuma, Kiyozumi [2 ]
机构：
[1] Electrical and Electronic Engineering, Graduate School of Industrial Technology, Nihon University, 1-2-1, Izumi-cho, Narashino 275-8575, Japan
[2] College of Industrial Technology, Nihon University, 1-2-1, Izumi-cho, Narashino 275-8575, Japan
来源：
IEEJ Transactions on Fundamentals and Materials | 2014年 / 134卷 / 01期
关键词：
D O I：
10.1541/ieejfms.134.47
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：47 / 52
相关论文
共 50 条
  • [31] Effect of N2 flow rate on the properties of N doped TiO2 films deposited by DC coupled RF magnetron sputtering
    Peng, Shou
    Yang, Yong
    Li, Gang
    Jiang, Jiwen
    Jin, Kewu
    Yao, TingTing
    Zhang, Kuanxiang
    Cao, Xin
    Wang, Yun
    Xu, Genbao
    Journal of Alloys and Compounds, 2016, 678 : 355 - 359
  • [32] Influence of N2:(N2+Ar) flow ratio and substrate temperature on the properties of zirconium nitride films prepared by reactive dc magnetron sputtering
    Hu, LL
    Li, DJ
    Fang, GJ
    APPLIED SURFACE SCIENCE, 2003, 220 (1-4) : 367 - 371
  • [33] Effect of N2 partial pressure on the microstructure and texture of MgO films deposited by rf-magnetron sputtering
    Chen, S. C.
    Ku, P. C.
    Shen, C. L.
    Fang, Y. H.
    Huang, K. T.
    Lin, G. P.
    Hong, W. H.
    MULTI-FUNCTIONAL MATERIALS AND STRUCTURES, PTS 1 AND 2, 2008, 47-50 : 588 - +
  • [34] Effect of N2 flow rate on the properties of N doped TiO2 films deposited by DC coupled RF magnetron sputtering
    Peng, Shou
    Yang, Yong
    Li, Gang
    Jiang, Jiwen
    Jin, Kewu
    Yao, TingTing
    Zhang, Kuanxiang
    Cao, Xin
    Wang, Yun
    Xu, Genbao
    JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 678 : 355 - 359
  • [35] Effect of Nitrogen Ratio in Sputtering on the Quality of Film Formation and Electron Emission Properties of Nitride Films
    Gu, Yuqing
    Li, Juannan
    Wang, Dan
    Zhang, Na
    COATINGS, 2025, 15 (01):
  • [36] Growth of tantalum nitride films on Si by radio frequency reactive sputtering:: Effect of N2/Ar flow ratio
    Lin, JC
    Chen, G
    Lee, C
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (05) : 1835 - 1839
  • [37] Thin film formation of EuGa2S4 by rf sputtering and improvement of film transmittance
    Dohi, Minoru
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 7-8, 2013, 10 (7-8): : 1115 - 1118
  • [38] Characterization of Amorphous SnO2:N Thin-films Prepared by RF Magnetron Sputtering in Ar/N2 Mixed Gas Atmosphere
    Kawaguchi, Takuma
    Oishi, Ryuji
    Shimizu, Maki
    Hijikata, Yasuto
    Aikawa, Shinya
    IEEJ Transactions on Electronics, Information and Systems, 2024, 144 (11) : 1093 - 1099
  • [39] Optimization of N2/Ar gas flow ratio for the realization of nitrogen-doped p-type ZnCdO thin films synthesized by RF magnetron sputtering
    Song, Yanping
    Sui, Yingrui
    Hua, Zhong
    Wu, Yanjie
    Zhang, Yu
    Wang, Zhanwu
    Lv, Shiquan
    Yao, Bin
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017, 61 : 57 - 62
  • [40] Preparation of MgNx thin films using RF-DC coupled magnetron sputtering in Ar-N2 gas
    Migita, Tatsuo
    Kamei, Ryuuzou
    Tanaka, Takeshi
    Kawabata, Keishi
    Shinku/Journal of the Vacuum Society of Japan, 1998, 41 (03): : 289 - 291
12345