Effect of N2 partial pressure on the microstructure and texture of MgO films deposited by rf-magnetron sputtering

被引：0

作者：

Chen, S. C. ^{[1
,2
]}

Ku, P. C. ^{[3
]}

Shen, C. L. ^{[3
]}

Fang, Y. H. ^{[3
]}

Huang, K. T. ^{[3
]}

Lin, G. P. ^{[3
]}

Hong, W. H. ^{[1
,2
]}

机构：

[1] MingChi Univ Technol, Dept Mat Engn, Taipei 243, Taiwan

[2] Natl Taiwan Univ, Ctr Nanostorage Res, Taipei 106, Taiwan

[3] Natl Taiwan Univ, Inst Mat Sci & Engn, Taipei 106, Taiwan

来源：

MULTI-FUNCTIONAL MATERIALS AND STRUCTURES, PTS 1 AND 2 | 2008年 / 47-50卷

关键词：

MgO films; flow rate ratio of N-2 to Ar; rf- magnetron sputtering;

D O I：

10.4028/www.scientific.net/AMR.47-50.588

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Intensity of the (200) peak in the X-ray diffraction pattern of the MgO film increases as N-2 is added to At gas during MgO deposition. The optimum flow rate ratio of N-2 to At in order to obtain maximum intensity of the MgO (200) peak is 2 : 5. As introducing N-2 gas, no residual nitrogen atoms are found in the MgO films, which are confirmed by AES and ESCA analysis. On the other hand, the TEM dark field image shows that the average grain size of MgO film increases with increasing the flow rate ratio of N-2 to Ar. This is due to that the deposition rate of MgO film is decreased with increasing the flow rate ratio of N-2 to Ar.

引用

页码：588 / +

页数：2

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