Tribological characteristics of bulk ((2)over-bar01) β-Ga2O3 substrate crystals grown by EFG

被引：0

作者：

Butenko, P. N. ^{[1
]}

Boiko, M. E. ^{[1
]}

Chikiryaka, A., V ^{[1
]}

Guzilova, L., I ^{[1
]}

Pozdnyakov, A. O. ^{[1
]}

Sharkov, M. D. ^{[1
]}

Almaev, A., V ^{[2
]}

Nikolaev, V., I ^{[1
]}

机构：

[1] Ioffe Inst, St Petersburg, Russia

[2] Tomsk State Univ, Tomsk, Russia

来源：

MATERIALS PHYSICS AND MECHANICS | 2023年 / 51卷 / 06期

基金：

俄罗斯科学基金会;

关键词：

gallium oxide; EFG; wear; coefficient of friction; tribology; bulk crystals; GALLIUM OXIDE; FILMS;

D O I：

10.18149/MPM.5162023_13

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The tribological and mechanical tests of bulk substate crystals of gallium oxide beta-polymorph grown by the EFG technique were carried out. The correlation of coefficient of friction and wear coefficient with hardness is discussed. It is shown that the smooth, epi-ready surface of ((2) over bar 01) Ga2O3 samples has an extremely low resistance to abrasion by a sapphire ball. At the same time, the surface of the beta-Ga2O3 wafer that has not undergone a complete post-growth processing cycle has high mechanical properties. It is pointed out that this difference can be due to deformation defects, which are entered into the subsurface layers during the mechanical impact on the semiconductor material.

引用

页码：153 / 162

页数：10

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