Tribological characteristics of bulk ((2)over-bar01) β-Ga2O3 substrate crystals grown by EFG

被引：0

作者：

Butenko, P. N. ^{[1
]}

Boiko, M. E. ^{[1
]}

Chikiryaka, A., V ^{[1
]}

Guzilova, L., I ^{[1
]}

Pozdnyakov, A. O. ^{[1
]}

Sharkov, M. D. ^{[1
]}

Almaev, A., V ^{[2
]}

Nikolaev, V., I ^{[1
]}

机构：

[1] Ioffe Inst, St Petersburg, Russia

[2] Tomsk State Univ, Tomsk, Russia

来源：

MATERIALS PHYSICS AND MECHANICS | 2023年 / 51卷 / 06期

基金：

俄罗斯科学基金会;

关键词：

gallium oxide; EFG; wear; coefficient of friction; tribology; bulk crystals; GALLIUM OXIDE; FILMS;

D O I：

10.18149/MPM.5162023_13

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The tribological and mechanical tests of bulk substate crystals of gallium oxide beta-polymorph grown by the EFG technique were carried out. The correlation of coefficient of friction and wear coefficient with hardness is discussed. It is shown that the smooth, epi-ready surface of ((2) over bar 01) Ga2O3 samples has an extremely low resistance to abrasion by a sapphire ball. At the same time, the surface of the beta-Ga2O3 wafer that has not undergone a complete post-growth processing cycle has high mechanical properties. It is pointed out that this difference can be due to deformation defects, which are entered into the subsurface layers during the mechanical impact on the semiconductor material.

引用

页码：153 / 162

页数：10

共 50 条

[21] The [010] tilt low angle grain boundaries in bulk β-Ga2O3 crystals grown by EFG method
Wang, Pei
Li, Chenglong
Dong, Yue
Li, Yang
Jia, Zhitai
Tao, Xutang
Mu, Wenxiang
SURFACES AND INTERFACES, 2025, 59
[22] 2 in. Bulk β-Ga2O3 Single Crystals Grown by EFG Method with High Wafer-Scale Quality
Feng, Ganrong
Li, Shan
Tian, Yawen
Qi, Song
Guo, Daoyou
Tang, Weihua
ACS OMEGA, 2024, 9 (20): : 22084 - 22089
[23] Band alignment of atomic layer deposited SiO2 and HfSiO4 with ((2)over-bar01) β-Ga2O3
Carey, Patrick H.
Ren, Fan
Hays, David C.
Gila, Brent P.
Pearton, Stephen J.
Jang, Soohwan
Kuramata, Akito
JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (07)
[24] Influence of Charged Dislocation on Mobility in Degenerate Homoepitaxial Si-Doped Ga2O3 Films on ((2)over-bar01) β-Ga2O3 by Laser Molecular Beam Epitaxy
Chen, Xuanhu
Ye, Jiandong
Gu, Shulin
Zhang, Rong
Zheng, Youdou
2019 COMPOUND SEMICONDUCTOR WEEK (CSW), 2019,
[25] Crystal defects observed by the etch-pit method and their effects on Schottky-barrier-diode characteristics on ((2)over-bar01) β-Ga2O3
Kasu, Makoto
Oshima, Takayoshi
Hanada, Kenji
Moribayashi, Tomoya
Hashiguchi, Akihiro
Oishi, Toshiyuki
Koshi, Kimiyoshi
Sasaki, Kohei
Kuramata, Akito
Ueda, Osamu
JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (09)
[26] β-Ga2O3 bulk single crystals grown by a casting method
Xia, Ning
Liu, Yingying
Wu, Dan
Li, Lei
Ma, Keke
Wang, Jiabin
Zhang, Hui
Yang, Deren
JOURNAL OF ALLOYS AND COMPOUNDS, 2023, 935
[27] On the bulk β-Ga2O3 single crystals grown by the Czochralski method
Galazka, Zbigniew
Irmscher, Klaus
Uecker, Reinhard
Bertram, Rainer
Pietsch, Mike
Kwasniewski, Albert
Naumann, Martin
Schulz, Tobias
Schewski, Robert
Klimm, Detlef
Bickermann, Matthias
JOURNAL OF CRYSTAL GROWTH, 2014, 404 : 184 - 191
[28] High-Voltage ((2)over-bar01) β-Ga2O3 Vertical Schottky Barrier Diode With Thermally-Oxidized Termination
Wang, Yuangang
Cai, Shujun
Liu, Ming
Lv, Yuanjie
Long, Shibing
Zhou, Xingye
Song, Xubo
Liang, Shixiong
Han, Tingting
Tan, Xin
Feng, Zhihong
IEEE ELECTRON DEVICE LETTERS, 2020, 41 (01) : 131 - 134
[29] Conduction mechanism in highly doped β-Ga2O3((2)over-bar01) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes
Oishi, Toshiyuki
Harada, Kazuya
Koga, Yuta
Kasu, Makoto
JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (03)
[30] Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 ((2)over-bar01)
Jia, Ye
Zeng, Ke
Wallace, Joshua S.
Gardella, Joseph A.
Singisetti, Uttam
APPLIED PHYSICS LETTERS, 2015, 106 (10)

← 1 2 3 4 5 →