Photoresponsive characteristics of EFG-grown iron-doped (100) Ga2O3 substrate with low dark current

被引：12
|
作者：
Chu, Xulong [1 ,2 ,3 ]
Liu, Zeng [1 ,2 ,4 ,5 ]
Zhang, Shaohui [6 ,7 ]
Li, Peigang [1 ,2 ]
Tang, Weihua [1 ,2 ,4 ,5 ,8 ]
机构：
[1] Beijing Univ Posts & Telecommun, Lab Informat Funct Mat & Devices, Sch Sci, Beijing 100876, Peoples R China
[2] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
[3] China Aerosp Syst Simulat Technol Co Ltd Beijing, Beijing 100195, Peoples R China
[4] Nanjing Univ Posts & Telecommun, Coll Elect & Opt Engn, Nanjing 210023, Peoples R China
[5] Nanjing Univ Posts & Telecommun, Coll Microelect, Nanjing 210023, Peoples R China
[6] Univ Sci & Technol China, Sch Nanotech & Nanobion, Hefei 230026, Peoples R China
[7] Chinese Acad Sci, Div Interdisciplinary & Comprehens Res & Platform, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China
[8] Nanjing Univ Posts & Telecommun, Natl & Local Joint Engn Lab RF Integrat & Micropa, Nanjing 210023, Peoples R China
来源：
PHYSICA SCRIPTA | 2021年 / 96卷 / 06期
基金：
中国国家自然科学基金;
关键词：
Ga2O3; sensitivity; solar-blind; EFG;
D O I：
10.1088/1402-4896/abed80
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Low dark current is more desired in photodetector, that contributes to high photo-to-dark current ratio and high sensitivity. Therefore, in this paper, we use the edge-defined-film-fed (EFG)-grown iron (Fe)-doped Ga2O3 substrate to fabricate a solar-blind ultraviolet (UV) photodetector. Fortunately, the photodetector shows a low dark current of similar to 10(-13)A, which are more promised to advance the solar-blind photodetections. The responsivity (R) of 0.145 mA W-1, specific detectivity (D*) of 6 x(1010) cm Hz(1/2) W-1 (Jones), linear dynamic region (LDR) of 75.56 dB and rise/decay time of 0.28 s/0.43 s are achieved in this Fe-doped beta-Ga2O3 solar-blind UV photodetector.
引用
收藏
页数：5
相关论文
共 50 条
  • [1] Self-powered solar-blind photodiodes based on EFG-grown(100)-dominant β-Ga2O3 substrate
    褚旭龙
    刘增
    支钰崧
    刘媛媛
    张少辉
    吴超
    高昂
    李培刚
    郭道友
    吴真平
    唐为华
    Chinese Physics B, 2021, (01) : 559 - 562
  • [2] Self-powered solar-blind photodiodes based on EFG-grown (100)-dominant β-Ga2O3 substrate
    Chu, Xu-Long
    Liu, Zeng
    Zhi, Yu-Song
    Liu, Yuan-Yuan
    Zhang, Shao-Hui
    Wu, Chao
    Gao, Ang
    Li, Pei-Gang
    Guo, Dao-You
    Wu, Zhen-Ping
    Tang, Wei-Hua
    CHINESE PHYSICS B, 2021, 30 (01)
  • [3] Characteristics of Sn-doped β-Ga2O3 single crystals grown by EFG method
    Je, Tae-Wan
    Park, Su-Bin
    Jang, Hui-Yeon
    Choi, Su-Min
    Park, Mi-Seon
    Jang, Yeon-Suk
    Lee, Won-Jae
    Moon, Yun-Gon
    Kang, Jin-Ki
    Shin, Yun-Ji
    Bae, Si -Yong
    JOURNAL OF THE KOREAN CRYSTAL GROWTH AND CRYSTAL TECHNOLOGY, 2023, 33 (02): : 83 - 90
  • [4] Tribological characteristics of bulk ((2)over-bar01) β-Ga2O3 substrate crystals grown by EFG
    Butenko, P. N.
    Boiko, M. E.
    Chikiryaka, A., V
    Guzilova, L., I
    Pozdnyakov, A. O.
    Sharkov, M. D.
    Almaev, A., V
    Nikolaev, V., I
    MATERIALS PHYSICS AND MECHANICS, 2023, 51 (06): : 153 - 162
  • [5] Iron-doped β-Ga2O3 single crystal: the iron occupying site and optical properties
    Du, Yuchao
    Zhang, Chaoyi
    Cui, Shuting
    Li, Guoping
    Tang, Ning
    Shen, Bo
    Xu, Jun
    Tang, Huili
    Zhao, Lijuan
    CRYSTENGCOMM, 2025, 27 (15) : 2194 - 2202
  • [6] On the origin of red luminescence from iron-doped β-Ga2O3 bulk crystals
    Sun, Rujun
    Ooi, Yu Kee
    Dickens, Peter T.
    Lynn, Kelvin G.
    Scarpulla, Michael A.
    APPLIED PHYSICS LETTERS, 2020, 117 (05)
  • [7] Trapping Effects in Si δ-Doped β-Ga2O3 MESFETs on an Fe-Doped β-Ga2O3 Substrate
    McGlone, Joe F.
    Xia, Zhanbo
    Zhang, Yuewei
    Joishi, Chandan
    Lodha, Saurabh
    Rajan, Siddharth
    Ringel, Steven A.
    Arehart, Aaron R.
    IEEE ELECTRON DEVICE LETTERS, 2018, 39 (07) : 1042 - 1045
  • [8] The [010] tilt low angle grain boundaries in bulk β-Ga2O3 crystals grown by EFG method
    Wang, Pei
    Li, Chenglong
    Dong, Yue
    Li, Yang
    Jia, Zhitai
    Tao, Xutang
    Mu, Wenxiang
    SURFACES AND INTERFACES, 2025, 59
  • [9] The origin of twins in the growth of the (100) plane of a β-Ga2O3 crystal using EFG
    Bu, Yuzhe
    Wei, Jinshan
    Sai, Qinglin
    Qi, Hongji
    CRYSTENGCOMM, 2023, 25 (24) : 3556 - 3563
  • [10] Evaluation of diode characteristics for fully vertical β-Ga2O3 on silicon (100) substrate
    Manoj K. Yadav
    Satinder K. Sharma
    Ankush Bag
    Journal of Materials Science: Materials in Electronics, 2020, 31 : 13845 - 13856
12345