Photoresponsive characteristics of EFG-grown iron-doped (100) Ga2O3 substrate with low dark current

被引：12
|
作者：
Chu, Xulong [1 ,2 ,3 ]
Liu, Zeng [1 ,2 ,4 ,5 ]
Zhang, Shaohui [6 ,7 ]
Li, Peigang [1 ,2 ]
Tang, Weihua [1 ,2 ,4 ,5 ,8 ]
机构：
[1] Beijing Univ Posts & Telecommun, Lab Informat Funct Mat & Devices, Sch Sci, Beijing 100876, Peoples R China
[2] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
[3] China Aerosp Syst Simulat Technol Co Ltd Beijing, Beijing 100195, Peoples R China
[4] Nanjing Univ Posts & Telecommun, Coll Elect & Opt Engn, Nanjing 210023, Peoples R China
[5] Nanjing Univ Posts & Telecommun, Coll Microelect, Nanjing 210023, Peoples R China
[6] Univ Sci & Technol China, Sch Nanotech & Nanobion, Hefei 230026, Peoples R China
[7] Chinese Acad Sci, Div Interdisciplinary & Comprehens Res & Platform, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China
[8] Nanjing Univ Posts & Telecommun, Natl & Local Joint Engn Lab RF Integrat & Micropa, Nanjing 210023, Peoples R China
来源：
PHYSICA SCRIPTA | 2021年 / 96卷 / 06期
基金：
中国国家自然科学基金;
关键词：
Ga2O3; sensitivity; solar-blind; EFG;
D O I：
10.1088/1402-4896/abed80
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Low dark current is more desired in photodetector, that contributes to high photo-to-dark current ratio and high sensitivity. Therefore, in this paper, we use the edge-defined-film-fed (EFG)-grown iron (Fe)-doped Ga2O3 substrate to fabricate a solar-blind ultraviolet (UV) photodetector. Fortunately, the photodetector shows a low dark current of similar to 10(-13)A, which are more promised to advance the solar-blind photodetections. The responsivity (R) of 0.145 mA W-1, specific detectivity (D*) of 6 x(1010) cm Hz(1/2) W-1 (Jones), linear dynamic region (LDR) of 75.56 dB and rise/decay time of 0.28 s/0.43 s are achieved in this Fe-doped beta-Ga2O3 solar-blind UV photodetector.
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页数：5
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