Enhanced Efficiency GaAs/InxGa1-xAs QWSC

被引:0
|
作者
Salem, Ahmed Ibrahim [1 ]
Amar, Ahmed S.I. [1 ]
Hafez, Alaa El-Din Sayed [1 ]
机构
[1] Alexandria University, Air Defence College, Dept. of Electronics & Comm, Alexandria, Egypt
关键词
Enhanced efficiency - High-efficiency solar cells - Molefraction - Optimized parameter - Optimum parameters - Quantum-wells - Space charge regions - Spacer thickness - Well width - Width ratio;
D O I
暂无
中图分类号
学科分类号
摘要
15
引用
收藏
相关论文
共 50 条
  • [31] Optical properties of stepped InxGa1-xAs/GaAs quantum wells
    D'Andrea, A
    Tomassini, N
    Ferrari, L
    Righini, M
    Selci, S
    Bruni, MR
    Schiumarini, D
    Simeone, MG
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (12) : 7920 - 7928
  • [32] Optical properties of stepped InxGa1-xAs/GaAs quantum wells
    D'Andrea, A.
    Tomassini, N.
    Ferrari, L.
    Righini, M.
    Selci, S.
    Bruni, M.R.
    Schiumarini, D.
    Simeone, M.G.
    Microelectronic Engineering, 1998, 43-44 : 259 - 263
  • [33] PHOTOCURRENT SPECTROSCOPY OF INXGA1-XAS/GAAS MULTIPLE QUANTUM WELLS
    YU, PW
    SANDERS, GD
    EVANS, KR
    REYNOLDS, DC
    BAJAJ, KK
    STUTZ, CE
    JONES, RL
    APPLIED PHYSICS LETTERS, 1989, 54 (22) : 2230 - 2232
  • [34] Excitonic recombination and absorption in InxGa1-xAs/GaAs heterostructure nanowires
    De Luca, Marta
    Lavenuta, Giovanna
    Polimeni, Antonio
    Rubini, Silvia
    Grillo, Vincenzo
    Mura, Francesco
    Miriametro, Antonio
    Capizzi, Mario
    Martelli, Faustino
    PHYSICAL REVIEW B, 2013, 87 (23)
  • [35] Optical diagnostics of quantum dots in GaAS/InxGa1-xAs heterostructures
    Aleshkin, VY
    Gusev, SA
    Danil'tsev, VM
    Drozdov, MN
    Khrykin, OI
    Krasil'nik, ZF
    Revin, DG
    Shashkin, VI
    PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1998, 1-2 : 143 - 148
  • [36] Optical pumping in strained InxGa1-xAs/GaAs quantum wells
    Hassen, F
    Sghaier, H
    Maaref, H
    Murray, R
    THIN FILMS EPITAXIAL GROWTH AND NANOSTRUCTURES, 1999, 79 : 370 - 372
  • [37] INTERFACIAL MICROSTRUCTURES IN INXGA1-XAS/GAAS STRAINED LAYER STRUCTURES
    YAO, JY
    ANDERSSON, TG
    DUNLOP, GL
    CHEMISTRY AND DEFECTS IN SEMICONDUCTOR HETEROSTRUCTURES, 1989, 148 : 303 - 308
  • [38] RESIDUAL STRAIN ANALYSIS OF INXGA1-XAS/GAAS HETEROEPITAXIAL LAYERS
    KRISHNAMOORTHY, V
    LIN, YW
    CALHOUN, L
    LIU, HL
    PARK, RM
    APPLIED PHYSICS LETTERS, 1992, 61 (22) : 2680 - 2682
  • [40] Optical diagnostics of quantum dots in GaAs/InxGa1-xAs heterostructures
    Aleshkin, VY
    Danil'tsev, VM
    Khrykin, OI
    Krasil'nik, ZF
    Revin, DG
    Shashkin, VI
    ADVANCED ELECTRONIC TECHNOLOGIES AND SYSTEMS BASED ON LOW-DIMENSIONAL QUANTUM DEVICES, 1997, 42 : 65 - 66