Growth of InxGa1-xAs on GaAs (001) by molecular beam epitaxy

被引：0
|
作者：
机构：
[1] Westwood, D.I.
[2] Woolf, D.A.
[3] Williams, R.H.
来源：
Westwood, D.I. | 1600年 / 98期
关键词：
Semiconducting Indium Compounds;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] GROWTH OF INXGA1-XAS ON GAAS (001) BY MOLECULAR-BEAM EPITAXY
    WESTWOOD, DI
    WOOLF, DA
    WILLIAMS, RH
    JOURNAL OF CRYSTAL GROWTH, 1989, 98 (04) : 782 - 792
  • [2] Heteroepitaxial selective growth of InxGa1-xAs on SiO2-patterned GaAs(001) by molecular beam epitaxy
    Lee, SC
    Dawson, LR
    Brueck, SRJ
    Stintz, A
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (09) : 4856 - 4865
  • [3] Heteroepitaxial selective growth of InxGa1-xAs on SiO2-patterned GaAs(001) by molecular beam epitaxy
    Lee, S.C., 1600, American Institute of Physics Inc. (96):
  • [4] Photoluminescence of the residual shallow acceptor in InxGa1-xAs grown on GaAs(001) by molecular beam epitaxy
    Xu, Zhong-Ying, 1600, (70):
  • [5] GROWTH OF INXGA1-XAS ON SILICON BY MOLECULAR-BEAM EPITAXY
    GEORGAKILAS, A
    HATSOPOULOS, Z
    ILIADIS, AA
    CHRISTOU, A
    MATERIALS LETTERS, 1989, 7 (12) : 456 - 460
  • [6] PHOTOLUMINESCENCE OF THE RESIDUAL SHALLOW ACCEPTOR IN INXGA1-XAS GROWN ON GAAS(001) BY MOLECULAR-BEAM EPITAXY
    XU, ZY
    XU, JZ
    ANDERSSON, TG
    CHEN, ZG
    SOLID STATE COMMUNICATIONS, 1989, 70 (05) : 505 - 509
  • [7] RAMAN-SCATTERING FROM INXGA1-XAS GROWN ON GAAS(001) BY MOLECULAR-BEAM EPITAXY
    SOBIESIERSKI, Z
    WESTWOOD, DI
    WILLIAMS, RH
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1990, 5 (02): : 265 - 268
  • [8] MBE growth of strained InxGa1-xAs on GaAs(001)
    Nemcsics, A
    Olde, J
    Geyer, M
    Schnurpfeil, R
    Manzke, R
    Skibowski, M
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1996, 155 (02): : 427 - 437
  • [9] Remote epitaxy of InxGa1-xAs (001) on graphene covered GaAs (001) substrates
    Henksmeier, T.
    Schulz, J. F.
    Kluth, E.
    Feneberg, M.
    Goldhahn, R.
    Sanchez, A. M.
    Voigt, M.
    Grundmeier, G.
    Reuter, D.
    JOURNAL OF CRYSTAL GROWTH, 2022, 593
  • [10] Raman scattering in InxGa1-xAs/GaAs superlattices grown by molecular beam epitaxy
    Constant, M
    Matrullo, N
    Lorriaux, A
    Boussekey, L
    JOURNAL OF RAMAN SPECTROSCOPY, 1996, 27 (3-4) : 225 - 229
12345