Photoluminescence of the residual shallow acceptor in InxGa1-xAs grown on GaAs(001) by molecular beam epitaxy

被引：0
|
作者：
机构：
[1] Xu, Zhong-Ying
[2] Xu, Ji-Zong
[3] Andersson, T.G.
[4] Chen, Zong-Gui
来源：
Xu, Zhong-Ying | 1600年 / 70期
关键词：
Semiconducting Gallium Arsenide;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] PHOTOLUMINESCENCE OF THE RESIDUAL SHALLOW ACCEPTOR IN INXGA1-XAS GROWN ON GAAS(001) BY MOLECULAR-BEAM EPITAXY
    XU, ZY
    XU, JZ
    ANDERSSON, TG
    CHEN, ZG
    SOLID STATE COMMUNICATIONS, 1989, 70 (05) : 505 - 509
  • [2] Growth of InxGa1-xAs on GaAs (001) by molecular beam epitaxy
    Westwood, D.I., 1600, (98):
  • [3] GROWTH OF INXGA1-XAS ON GAAS (001) BY MOLECULAR-BEAM EPITAXY
    WESTWOOD, DI
    WOOLF, DA
    WILLIAMS, RH
    JOURNAL OF CRYSTAL GROWTH, 1989, 98 (04) : 782 - 792
  • [4] RAMAN-SCATTERING FROM INXGA1-XAS GROWN ON GAAS(001) BY MOLECULAR-BEAM EPITAXY
    SOBIESIERSKI, Z
    WESTWOOD, DI
    WILLIAMS, RH
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1990, 5 (02): : 265 - 268
  • [5] Raman scattering in InxGa1-xAs/GaAs superlattices grown by molecular beam epitaxy
    Constant, M
    Matrullo, N
    Lorriaux, A
    Boussekey, L
    JOURNAL OF RAMAN SPECTROSCOPY, 1996, 27 (3-4) : 225 - 229
  • [6] THE ELECTRICAL-PROPERTIES OF MOLECULAR-BEAM EPITAXY GROWN INXGA1-XAS ON GAAS
    KIM, TS
    SHIH, HD
    ANTHONY, JM
    DUNCAN, WM
    FARRINGTON, DL
    KEENAN, JA
    MOORE, TM
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (02): : 376 - 379
  • [7] AN INVESTIGATION OF INXGA1-XAS/GAAS QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY
    JEONG, J
    SHAHID, MA
    LEE, JC
    SCHLESINGER, TE
    MILNES, AG
    JOURNAL OF APPLIED PHYSICS, 1988, 63 (11) : 5464 - 5468
  • [8] DETERMINATION OF IN COMPOSITION IN MOLECULAR-BEAM EPITAXY GROWN INXGA1-XAS/GAAS HETEROSTRUCTURES
    WANG, SM
    OLSSON, E
    TREIDERIS, G
    ANDERSSON, TG
    JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) : 616 - 618
  • [9] LAYERS OF INXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY ON SUBSTRATES OF (100) GAAS
    DVORYANKINA, GG
    DVORYANKIN, VF
    PETROV, AG
    POROTIKOV, AP
    KUDRYASHOV, AA
    ORMONT, AB
    VARAKSIN, GA
    DLUGACH, LB
    INORGANIC MATERIALS, 1988, 24 (07) : 920 - 924
  • [10] RAMAN-SCATTERING IN INXGA1-XAS/GAAS SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY
    CONSTANT, M
    MATRULLO, N
    LORRIAUX, A
    FAUQUEMBERGUE, R
    DRUELLE, Y
    DIPERSIO, J
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 20 (1-2): : 69 - 72
12345