Photoluminescence of the residual shallow acceptor in InxGa1-xAs grown on GaAs(001) by molecular beam epitaxy

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[1] Xu, Zhong-Ying
[2] Xu, Ji-Zong
[3] Andersson, T.G.
[4] Chen, Zong-Gui
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Xu, Zhong-Ying | 1600年 / 70期
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Semiconducting Gallium Arsenide;
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