Enhanced Efficiency GaAs/InxGa1-xAs QWSC

被引：0
|
作者：
Salem, Ahmed Ibrahim [1 ]
Amar, Ahmed S.I. [1 ]
Hafez, Alaa El-Din Sayed [1 ]
机构：
[1] Alexandria University, Air Defence College, Dept. of Electronics & Comm, Alexandria, Egypt
来源：
International Telecommunications Conference, ITC-Egypt 2022 - Proceedings | 2022年
关键词：
Enhanced efficiency - High-efficiency solar cells - Molefraction - Optimized parameter - Optimum parameters - Quantum-wells - Space charge regions - Spacer thickness - Well width - Width ratio;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
15
引用
收藏
相关论文
共 50 条
  • [21] Interfacial microstructure of InxGa1-xAs/GaAs strained layers
    Yao, J.Y.
    Andersson, T.G.
    Dunlop, G.L.
    Materials Science Forum, 1995, 189-190 : 285 - 290
  • [22] Exciton complexes in InxGa1-xAs/GaAs quantum dots
    Bayer, M
    Gutbrod, T
    Forchel, A
    Kulakovskii, VD
    Gorbunov, A
    Michel, M
    Steffen, R
    Wang, KH
    PHYSICAL REVIEW B, 1998, 58 (08): : 4740 - 4753
  • [23] Investigation of InxGa1-xAs/GaAs heterostructures by electrochemical method
    Nemcsics, A
    Dobos, L
    HETEROSTRUCTURE EPITAXY AND DEVICES: HEAD '97, 1998, 48 : 135 - 138
  • [24] CURRENT CONTROLLED LPE GROWTH OF INXGA1-XAS ON GAAS
    ABULFADL, A
    STEFANAKOS, EK
    COLLIS, WJ
    JOURNAL OF CRYSTAL GROWTH, 1981, 51 (02) : 279 - 282
  • [25] GROWTH PHENOMENA AND CHARACTERISTICS OF STRAINED INXGA1-XAS ON GAAS
    PAMULAPATI, J
    BERGER, P
    CHANG, K
    OH, J
    CHEN, Y
    SINGH, J
    BHATTACHARYA, P
    GIBALA, R
    JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 193 - 196
  • [26] GROWTH OF INXGA1-XAS ON PATTERNED GAAS (100) SUBSTRATES
    GUHA, S
    MADHUKAR, A
    KAVIANI, K
    KAPRE, R
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (02): : 149 - 153
  • [27] Strain study of GaAs/InxGa1-xAs/GaAs structures grown by MOVPE
    Bedoui, M.
    Habchi, M. M.
    Moussa, I.
    Rebey, A.
    El Jani, B.
    SURFACE & COATINGS TECHNOLOGY, 2016, 295 : 107 - 111
  • [28] Magnetic properties of GaAs/δ⟨Mn⟩/GaAs/InxGa1-xAs/GaAs quantum wells
    Aronzon, B. A.
    Lagutin, A. S.
    Ryl'kov, V. V.
    Tugushev, V. V.
    Men'shov, V. N.
    Lashkul, A. V.
    Laiho, R.
    Vikhrova, O. V.
    Danilov, Yu. A.
    Zvonkov, B. N.
    JETP LETTERS, 2008, 87 (03) : 164 - 169
  • [29] Comments on the reflectivity of AlxGa1-xAs and InxGa1-xAs layers on GaAs substrates
    Engelbrecht, JAA
    SOUTH AFRICAN JOURNAL OF SCIENCE, 1999, 95 (09) : 413 - 414
  • [30] Optical pumping in strained InxGa1-xAs/GaAs quantum wells
    Hassen, F
    Sghaier, H
    Maaref, H
    Murray, R
    THIN SOLID FILMS, 1998, 336 (1-2) : 370 - 372
12345