Conduction mechanisms responsible for leakage currents in RF sputtered HfO2 high-κ gate-oxide thin film MOS capacitors

被引：0
|
作者：
Bhanu, J. Udaya [1 ]
Islam, Mohammed Aminul [1 ]
Thangadurai, P. [1 ]
机构：
[1] Centre for Nanoscience and Technology, Pondicherry University, R. V. Nagar, Kalapet,Puducherry,605014, India
来源：
Materials Science and Engineering: B | 2021年 / 265卷
关键词：
Gates (transistor) - Hafnium oxides - Leakage currents - MOS capacitors - Oxide films - Silicon compounds;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Leakage current mechanisms of ultrathin high-κ Er2O3 gate dielectric film
    武德起
    姚金城
    赵红生
    常爱民
    李锋
    半导体学报, 2009, 30 (10) : 21 - 26
  • [42] High-mobility BaSnO3 thin-film transistor with HfO2 gate insulator
    2016, Japan Society of Applied Physics (09)
  • [43] Study of stress-induced leakage current (SILC) in HfO2/Dy2O3 high-κ gate stacks on germanium
    Rahman, M. S.
    Evangelou, E. K.
    Androulidakis, I. I.
    Dimoulas, A.
    MICROELECTRONICS RELIABILITY, 2009, 49 (01) : 26 - 31
  • [44] High-mobility BaSnO3 thin-film transistor with HfO2 gate insulator
    Kim, Young Mo
    Park, Chulkwon
    Kim, Useong
    Ju, Chanjong
    Char, Kookrin
    APPLIED PHYSICS EXPRESS, 2016, 9 (01)
  • [45] Organic Thin-Film Transistors with Tailored Liquid Sources of High-κ HfO2 Using Excimer Laser Irradiation
    Nishizawa, Ryota
    Naka, Shigeki
    Okada, Hiroyuki
    Suzuki, Kazuyuki
    Kato, Kazumi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (01)
  • [46] Organic thin-film transistors with tailored liquid sources of High-μ HfO2 using excimer laser irradiation
    Nishizawa, Ryota
    Naka, Shigeki
    Okada, Hiroyuki
    Suzuki, Kazuyuki
    Kato, Kazumi
    Japanese Journal of Applied Physics, 2011, 50 (1 PART 3)
  • [47] Electrical properties of polycrystalline p-CuxO MOS capacitors with SiO2/HfO2 high κ stack gate dielectric on Silicon substrate
    Zou, Xiao
    Fang, Guojia
    Yuan, Longyan
    Liu, Nishuang
    Long, Hao
    2009 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC 2009), 2009, : 217 - +
  • [48] Effect of post metallization annealing on structural and electrical properties of Ge metal-oxide-semiconductor (MOS) capacitors with Pt/HfO2 gate stack
    Chandra, S. V. Jagadeesh
    Kim, Jin-Sung
    Moon, Kyung-Won
    Choi, Chel-Jong
    MICROELECTRONIC ENGINEERING, 2012, 89 : 76 - 79
  • [49] Current conduction mechanisms of RF-Magnetron sputtered Y2O3 gate oxide on gallium nitride
    Quah, Hock Jin
    Cheong, Kuan Yew
    CURRENT APPLIED PHYSICS, 2013, 13 (07) : 1433 - 1439
  • [50] HfO2/TiO2/HfO2 tri-layer high-K gate oxide based MoS2 negative capacitance FET with steep subthreshold swing
    Islam, Md. Sherajul
    Sadman, Shahrukh
    Islam, A. S. M. Jannatul
    Park, Jeongwon
    AIP ADVANCES, 2020, 10 (03)
12345