Conduction mechanisms responsible for leakage currents in RF sputtered HfO2 high-κ gate-oxide thin film MOS capacitors

被引：0
|
作者：
Bhanu, J. Udaya [1 ]
Islam, Mohammed Aminul [1 ]
Thangadurai, P. [1 ]
机构：
[1] Centre for Nanoscience and Technology, Pondicherry University, R. V. Nagar, Kalapet,Puducherry,605014, India
来源：
Materials Science and Engineering: B | 2021年 / 265卷
关键词：
Gates (transistor) - Hafnium oxides - Leakage currents - MOS capacitors - Oxide films - Silicon compounds;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Normally-off AlGaN/GaN MOS-HEMTs by KOH Wet Etch and RF-Sputtered HfO2 Gate Insulator
    Ahn, Woojin
    Seok, Ogyun
    Ha, Min-Woo
    Kim, Young-Shil
    Han, Min-Koo
    2013 25TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2013, : 311 - 314
  • [32] Effect of post-deposition annealing temperature on RF-sputtered HfO2 thin film for advanced CMOS technology
    Khairnar, A. G.
    Mahajan, A. M.
    SOLID STATE SCIENCES, 2013, 15 : 24 - 28
  • [33] Low Voltage, High Performance Thin Film Transistor with HfInZnO Channel and HfO2 Gate Dielectric
    Son, Dae-Ho
    Kim, Dae-Hwan
    Kim, Jung-Hye
    Sung, Shi-Joon
    Jung, Eun-Ae
    Kang, Jin-Kyu
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2010, 13 (08) : H274 - H277
  • [34] Hafnium-Indium-Zinc Oxide thin film transistors using HfO2 as gate dielectric, with both layers deposited by RF sputtering.
    Pons-Flores, C. A.
    Hernandez, I.
    Estrada, M.
    Garduno, I.
    Cerdeira, A.
    Tinoco, J.
    Mejia, I.
    Picos, R.
    2016 31ST SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO), 2016,
  • [35] A low gate leakage current and small equivalent oxide thickness MOSFET with Ti/HfO2 high-k gate dielectric
    Fu, C. H.
    Chang-Liao, K. S.
    Chang, Y. A.
    Hsu, Y. Y.
    Tzeng, T. H.
    Wang, T. K.
    Heh, D. W.
    Gu, P. Y.
    Tsai, M. J.
    MICROELECTRONIC ENGINEERING, 2011, 88 (07) : 1309 - 1311
  • [36] Modulation of charge trapping and current-conduction mechanism of TiO2-doped HfO2 gate dielectrics based MOS capacitors by annealing temperature
    20152801017689
    He, G. (hegang@ahu.edu.cn), 1600, Elsevier Ltd (647):
  • [37] Modulation of charge trapping and current-conduction mechanism of TiO2-doped HfO2 gate dielectrics based MOS capacitors by annealing temperature
    Zhang, J. W.
    He, G.
    Chen, H. S.
    Gao, J.
    Chen, X. F.
    Jin, P.
    Xiao, D. Q.
    Ma, R.
    Liu, M.
    Sun, Z. Q.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 647 : 1054 - 1060
  • [38] High-Performance Amorphous InGaZnO Thin-Film Transistors With HfO2/Lu2O3/HfO2 Sandwich Gate Dielectrics
    Her, Jim-Long
    Chen, Fa-Hsyang
    Li, Wei-Chen
    Pan, Tung-Ming
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (05) : 1659 - 1662
  • [39] High-performance InGaZnO thin-film transistor incorporating a HfO2/Er2O3/HfO2 stacked gate dielectric
    Pan, Tung-Ming
    Chen, Fa-Hsyang
    Shao, Yu-Hsuan
    RSC ADVANCES, 2015, 5 (63): : 51286 - 51289
  • [40] Fabrication and electrical properties of metal-oxide semiconductor capacitors based on polycrystalline p-CuxO and HfO2/SiO2 high-κ stack gate dielectrics
    Zou, Xiao
    Fang, Guojia
    Yuan, Longyan
    Liu, Nishuang
    Long, Hao
    Zhao, Xingzhong
    THIN SOLID FILMS, 2010, 518 (15) : 4446 - 4449
12345