Conduction mechanisms responsible for leakage currents in RF sputtered HfO2 high-κ gate-oxide thin film MOS capacitors

被引：0
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作者：
Bhanu, J. Udaya [1 ]
Islam, Mohammed Aminul [1 ]
Thangadurai, P. [1 ]
机构：
[1] Centre for Nanoscience and Technology, Pondicherry University, R. V. Nagar, Kalapet,Puducherry,605014, India
来源：
Materials Science and Engineering: B | 2021年 / 265卷
关键词：
Gates (transistor) - Hafnium oxides - Leakage currents - MOS capacitors - Oxide films - Silicon compounds;
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