Si/SiO2 interface roughness study using Fowler-Nordheim tunneling current oscillations
被引:0
|
作者:
Lai, L.
论文数: 0引用数: 0
h-index: 0
机构:
Department of Chemistry, Univ. of N. Carolina at Chapel Hill, Chapel Hill, NC 27599-3290, United StatesDepartment of Chemistry, Univ. of N. Carolina at Chapel Hill, Chapel Hill, NC 27599-3290, United States
Lai, L.
[1
]
Irene, Gene
论文数: 0引用数: 0
h-index: 0
机构:
Department of Chemistry, Univ. of N. Carolina at Chapel Hill, Chapel Hill, NC 27599-3290, United StatesDepartment of Chemistry, Univ. of N. Carolina at Chapel Hill, Chapel Hill, NC 27599-3290, United States
Irene, Gene
[1
]
机构:
[1] Department of Chemistry, Univ. of N. Carolina at Chapel Hill, Chapel Hill, NC 27599-3290, United States
来源:
|
1600年
/
American Institute of Physics Inc.卷
/
87期