Si/SiO2 interface roughness study using Fowler-Nordheim tunneling current oscillations

被引：0

作者：

Lai, L. ^{[1
]}

Irene, Gene ^{[1
]}

机构：

[1] Department of Chemistry, Univ. of N. Carolina at Chapel Hill, Chapel Hill, NC 27599-3290, United States

来源：

| 1600年 / American Institute of Physics Inc.卷 / 87期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 50 条

[31] The effect of transition region on the direct tunneling current and Fowler-Nordheim tunneling current oscillations in ultrathin MOS structures
Mao, LF
Zhang, HQ
Tan, CH
Xu, MZ
MICROELECTRONICS RELIABILITY, 2002, 42 (02) : 175 - 181
[32] Quantitative study of charge trapping in SiO2 during bipolar Fowler-Nordheim injection
Busseret, C
Baboux, N
Plossu, C
Burignat, S
Boivin, P
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2003, 322 (1-3) : 191 - 198
[33] Thickness measurements for ultrathin-film insulator MOS structure using Fowler-Nordheim tunneling current oscillations
Mao, Lingfeng
Tan, Changhua
Xu, Mingzhen
Wei, Jianlin
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2000, 21 (10): : 999 - 1004
[34] Study of Fowler-Nordheim tunneling current oscillations in ultra-thin insulator MOS structure by interference method
Mao, LF
Tan, CH
Xu, MZ
Wei, JL
ACTA PHYSICA SINICA, 2000, 49 (05) : 974 - 982
[35] Study of Fowler-Nordheim tunneling current oscillations in ultra-thin insulator MOS structure by interference method
Mao, Lingfeng
Tan, Changhua
Xu, Mingzhen
Wei, Jinlin
Wuli Xuebao/Acta Physica Sinica, 2000, 49 (05): : 974 - 982
[36] ELECTRON TRAP CENTER GENERATION DUE TO HOLE TRAPPING IN SIO2 UNDER FOWLER-NORDHEIM TUNNELING STRESS
UCHIDA, H
AJIOKA, T
APPLIED PHYSICS LETTERS, 1987, 51 (06) : 433 - 435
[37] A study of carrier-trap generation by Fowler-Nordheim tunneling stress on polycrystalline-silicon/SiO2/silicon structures
Jiang, J
Awadelkarim, OO
Chan, YD
SOLID-STATE ELECTRONICS, 1997, 41 (01) : 41 - 46
[38] Measurements of the widths of transition regions at Si-SiO2 interfaces in metal-oxide-semiconductor structures from quantum oscillations in Fowler-Nordheim tunneling current
Mao, LF
Tan, CH
Xu, MZ
SOLID STATE COMMUNICATIONS, 2001, 119 (02) : 67 - 71
[39] Effect of nitridation on Fowler-Nordheim tunneling coefficients in SiO2 MOS capacitors with WSi2-polysilicon gate
Croci, S
Plossu, C
Balland, B
Dubois, C
Boivin, P
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2001, 12 (4-6) : 333 - 338
[40] A QUANTITATIVE INVESTIGATION OF ELECTRON DETRAPPING IN SIO2 UNDER FOWLER-NORDHEIM STRESS
ZHANG, JF
TAYLOR, S
ECCLESTON, W
JOURNAL OF APPLIED PHYSICS, 1992, 71 (12) : 5989 - 5996

← 1 2 3 4 5 →