Si/SiO2 interface roughness study using Fowler-Nordheim tunneling current oscillations

被引：0

作者：

Lai, L. ^{[1
]}

Irene, Gene ^{[1
]}

机构：

[1] Department of Chemistry, Univ. of N. Carolina at Chapel Hill, Chapel Hill, NC 27599-3290, United States

来源：

| 1600年 / American Institute of Physics Inc.卷 / 87期

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[21] STUDY OF TUNNELING CURRENT OSCILLATION DEPENDENCE ON SIO2 THICKNESS AND SI ROUGHNESS AT THE SI SIO2 INTERFACE
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[22] Effects of the series resistance on Fowler-Nordheim tunneling oscillations
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[23] FOWLER-NORDHEIM TUNNELING INJECTION IN THE SI-SIO2 SYSTEM TREATED WITH ARGON PLASMA
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[24] Evolution of the Si-SiO2 interface trap characteristics with Fowler-Nordheim injection
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[28] INFLUENCE OF EFFECTIVE MASSES ON THE OSCILLATION OF FOWLER-NORDHEIM TUNNELING IN THIN SIO2 MOS CAPACITORS
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[29] Investigation of interface traps at Si/SiO2 interface of SOI pMOSFETs induced by Fowler–Nordheim tunneling stress using the DCIV method
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[30] Study of Fowler-Nordheim tunneling current oscillations of thin insulator MOS structure by wave interference method
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