Characterization of SiC MOS structures using conductance spectroscopy and capacitance voltage analysis

被引：0
|
作者：
Sveinbjörnsson, E.O?. [1 ]
Ahnoff, M. [1 ]
Ólafsson, H.O?. [1 ]
机构：
[1] Microtechnology Ctr. Chalmers S., Chalmers University of Technology, Department of Microelectronics, SE-412 96 Göteborg, Sweden
来源：
Materials Science Forum | 2000年 / 338卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Characterization of Interface State Density of Ni/p-GaN Structures by Capacitance/Conductance-Voltage-Frequency Measurements
    朱志甫
    张贺秋
    梁红伟
    彭新村
    邹继军
    汤彬
    杜国同
    Chinese Physics Letters, 2017, (09) : 88 - 92
  • [22] Characterization of the gate-voltage dependency of input capacitance in a SiC MOSFET
    Phankong, Nathabhat
    Funaki, Tsuyoshi
    Hikihara, Takashi
    IEICE ELECTRONICS EXPRESS, 2010, 7 (07): : 480 - 486
  • [23] Analysis of the Temperature Dependence of the Capacitance–Voltage and Conductance–Voltage Characteristics of Au/TiO2(rutile)/n-Si Structures
    BarIş KInacI
    Süleyman Özçelik
    Journal of Electronic Materials, 2013, 42 : 1108 - 1113
  • [24] Hole trapping in SiC-MOS devices evaluated by fast-capacitance-voltage method
    Hayashi, Mariko
    Sometani, Mitsuru
    Hatakeyama, Tetsuo
    Yano, Hiroshi
    Harada, Shinsuke
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (04)
  • [25] A comparative study on capacitance and conductance-voltage response of titanium dioxide based MOS hydrogen sensor
    Dwivedi, D
    Dwivedi, R
    Srivastava, SK
    SOLID STATE PHENOMENA, 1997, 55 : 113 - 116
  • [26] Non-equilibrium related effects in MOS-SOI structures capacitance-voltage measurements analysis
    Zareba, A
    Ikraiam, F
    Beck, RB
    Jakubowski, A
    PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2, 1998, 3316 : 1080 - 1082
  • [27] Comparative study on capacitance and conductance-voltage response of titanium dioxide based MOS hydrogen sensor
    Banaras Hindu Univ, Varanasi, India
    Diffusion and Defect Data Pt.B: Solid State Phenomena, 1997, 55 : 113 - 116
  • [28] Capacitance-voltage characterization of AlN MIS structures grown on 6H-SiC(0001) substrates by MOCVD
    Hageman, W
    Rys, A
    Schmitt, J
    Edgar, JH
    Liu, B
    Koleske, DD
    INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, 2002, : 129 - 132
  • [29] Analysis of effect of gate oxidation at SiC MOS interface on threshold-voltage shift using deep-level transient spectroscopy
    Hasegawa, Junichi
    Noguchi, Munetaka
    Furuhashi, Masayuki
    Nakata, Shuhei
    Iwasaki, Takayuki
    Kodera, Tetsuo
    Nishimura, Tadashi
    Hatano, Mutsuko
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (04)
  • [30] A numerical modeling of the frequency dependence of the capacitance-voltage and conductance-voltage characteristics of GaN MIS structures
    Nishiguchi, K.
    Nakata, K.
    Hashizume, T.
    JOURNAL OF APPLIED PHYSICS, 2022, 132 (17)
12345