Comparative study on capacitance and conductance-voltage response of titanium dioxide based MOS hydrogen sensor

被引：0
|
作者：
Banaras Hindu Univ, Varanasi, India [1 ]
机构：
来源：
Diffusion and Defect Data Pt.B: Solid State Phenomena | 1997年 / 55卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：113 / 116
相关论文
共 47 条
  • [1] A comparative study on capacitance and conductance-voltage response of titanium dioxide based MOS hydrogen sensor
    Dwivedi, D
    Dwivedi, R
    Srivastava, SK
    SOLID STATE PHENOMENA, 1997, 55 : 113 - 116
  • [2] A TITANIUM DIOXIDE-BASED MOS HYDROGEN SENSOR
    YADAVA, L
    DWIVEDI, R
    SRIVASTAVA, SK
    SOLID-STATE ELECTRONICS, 1990, 33 (10) : 1229 - 1234
  • [3] Sensing behavior and mechanism of titanium dioxide-based MOS hydrogen sensor
    Yadav, Lallan
    Gupta, Naveen Chandra
    Dwivedi, R.
    Singh, Ravi S.
    MICROELECTRONICS JOURNAL, 2007, 38 (12) : 1226 - 1232
  • [4] Effect of hydrogen exposure on the interface state density in titanium dioxide based MOS gas sensor
    Dwivedi, D
    Dwivedi, R
    Srivastava, SK
    PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2, 1998, 3316 : 513 - 516
  • [5] Fabrication and Characterization of Titanium Dioxide Based Pd/TiO2/Si MOS Sensor for Hydrogen Gas
    Ratan, Smrity
    Kumar, Chandan
    Kumar, Amit
    Jarwal, Deepak Kumar
    Mishra, Ashwini Kumar
    Jit, Satyabrata
    IEEE SENSORS JOURNAL, 2018, 18 (10) : 3952 - 3959
  • [6] Highly Sensitive Hydrogen Sulfide Sensor Based on Titanium Dioxide Nanomaterials
    Zhou, Qu
    Chen, Weigen
    Li, Jian
    Peng, Shudi
    Lu, Zhaorui
    Yang, Zhuang
    Xu, Lingna
    JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2018, 13 (12) : 1784 - 1788
  • [7] Performance study of hydrogen sulfide gas sensor based on titanium dioxide coated no-core fiber
    Liu M.
    Feng W.
    Huang G.
    Feng D.
    Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2019, 48 (08):
  • [8] Comparative Study of Titanium Dioxide Atomic Layer Deposition on Silicon Dioxide and Hydrogen-Terminated Silicon
    Methaapanon, Rungthiwa
    Bent, Stacey F.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2010, 114 (23): : 10498 - 10504
  • [9] Mechanism of formation of the response of a hydrogen gas sensor based on a silicon MOS diode
    V. I. Gaman
    V. I. Balyuba
    V. Yu. Gritsyk
    T. A. Davydova
    V. M. Kalygina
    Semiconductors, 2008, 42 : 334 - 338
  • [10] Mechanism of formation of the response of a hydrogen gas sensor based on a silicon MOS diode
    Garnan, V. I.
    Balyuba, V. I.
    Gritsyk, V. Yu.
    Davydova, T. A.
    Kalygina, V. M.
    SEMICONDUCTORS, 2008, 42 (03) : 334 - 338
12345