A new sense amplifier for submicron CMOS technology memories

被引：0

作者：

Tsiatouhas, Y. ^{[1
]}

Chrisanthopoulos, A. ^{[1
]}

Haniotakis, Th. ^{[1
,2
]}

Kamoulakos, G. ^{[1
]}

机构：

[1] Integrated Systems Development S.A., 22 K.Varnali Str., 152 33 Halandri, Athens, Greece

[2] Univ. of Athens, Dept. of Informatics

来源：

Advances in Physics, Electronics and Signal Processing Applications | 2000年

关键词：

Capacitance - CMOS integrated circuits - Computer aided logic design - Computer simulation - Digital storage - Electric delay lines - Electric inverters - Flash memory;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

In this paper a new sense amplifier is presented which is suitable for current sensing in SRAM and Flash memories. The proposed sense amplifier is characterised by its small area overhead and its low power operation. This design utilises only three transistors in the pitch of the bit lines for the sensing of the stored value in the selected memory cell. Compact layout designs and simulations in 0.25μm CMOS technology have been carried out to evaluate the efficiency of the proposed sensor.

引用

页码：90 / 93

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