A new single ended sense amplifier for low voltage embedded EEPROM non volatile memories

被引：7
|
作者：
Papaix, C [1 ]
Daga, JM [1 ]
机构：
[1] ATMEL ROUSSET, Design Technol Dept, Embedded Non Volatile Memory Grp, F-13106 Rousset, France
来源：
PROCEEDING OF THE 2002 IEEE INTERNATIONAL WORKSHOP ON MEMORY TECHNOLOGY, DESIGN AND TESTING | 2002年
关键词：
D O I：
10.1109/MTDT.2002.1029776
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
A new single ended sense amplifier is presented in this paper. It is based on a very simple direct current-voltage conversion. It has been designed in standard CMOS process for embedded non-volatile memories. Its performances are compared to one of the actually most integrated sense amplifiers, based on differential structures. A 40% faster access time has been obtained at 1.8V.
引用
收藏
页码：149 / 153
页数：5
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