Electroluminescence of Si, Ge and Ar ion-implanted Si-rich SiO2

被引：0
|
作者：
Wang, Yanbing [1 ]
Sun, Yongke [1 ]
Qiao, Yongping [1 ]
Zhang, Borui [1 ]
Qin, Guogang [1 ]
Chen, Wentai [1 ]
Gong, Yiyuan [1 ]
Wu, Dexin [1 ]
Ma, Zhenchang [1 ]
Zong, Wanhua [1 ]
机构：
[1] Peking Univ, Beijing, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2000年 / 21卷 / 07期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：667 / 672
相关论文
共 50 条
  • [41] Electroluminescence afterglow from indium tin oxide/Si-rich SiO 2/p-Si structure
    State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
    Chin. Phys. Lett., 2006, 5 (1306-1309):
  • [42] Optical properties of Si-rich SiO2 films in relation with embedded Si mesoscopic particles
    Hayashi, S
    Yamamoto, K
    JOURNAL OF LUMINESCENCE, 1996, 70 : 352 - 363
  • [43] White luminescence from Si+ and C+ ion-implanted SiO2 films
    Pérez-Rodríguez, A
    González-Varona, O
    Garrido, B
    Pellegrino, P
    Morante, JR
    Bonafos, C
    Carrada, M
    Claverie, A
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (01) : 254 - 262
  • [44] DIFFUSION OF ION-IMPLANTED SN IN SI, SI1-XGEX, AND GE
    KRINGHOJ, P
    ELLIMAN, RG
    APPLIED PHYSICS LETTERS, 1994, 65 (03) : 324 - 326
  • [45] ELECTRICALLY ACTIVE SUBTHRESHOLD DAMAGE IN SI ION-IMPLANTED WITH SI, GE, AND SN
    KRINGHOJ, P
    WILLIAMS, JS
    JAGADISH, C
    APPLIED PHYSICS LETTERS, 1994, 65 (17) : 2208 - 2210
  • [46] Low temperature (<700 °C) SiO2 and Si-rich SiO2 films: Short review
    Falcony, Ciro
    Estrada-Wiese, Denise
    De Anda, Jessica
    Perez-Diaz, Oscar
    Aceves-Mijares, Mariano
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2023, 41 (03):
  • [47] Cracking in hydrogen ion-implanted Si/Si0.8Ge0.2/Si heterostructures
    Shao, Lin
    Wang, Y. Q.
    Swadener, J. G.
    Nastasi, M.
    Thompson, Phillip E.
    Theodore, N. David
    APPLIED PHYSICS LETTERS, 2008, 92 (06)
  • [48] Visible electroluminescence from MOS capacitors with Si-implanted SiO2
    Matsuda, T
    Kawabe, M
    Iwata, H
    Ohzone, T
    IEICE TRANSACTIONS ON ELECTRONICS, 2002, E85C (11): : 1895 - 1904
  • [49] Blue electroluminescence from MOS capacitors with Si-implanted SiO2
    Matsuda, T
    Nishihara, K
    Kawabe, M
    Iwata, H
    Iwatsubo, S
    Ohzone, T
    SOLID-STATE ELECTRONICS, 2004, 48 (10-11) : 1933 - 1941
  • [50] Visible electroluminescence from Si+-implanted SiO2 films thermally grown on crystalline Si
    Liao, LS
    Bao, XM
    Li, NS
    Zheng, XQ
    Min, NB
    SOLID STATE COMMUNICATIONS, 1996, 97 (12) : 1039 - 1042
12345