共 50 条
- [31] Modeling of Ge nanocluster evolution in ion-implanted SiO2 layer NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 147 (1-4): : 286 - 291
- [32] Modeling of Ge nanocluster evolution in ion-implanted SiO2 layer Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1999, 147 (1-4): : 286 - 291
- [33] STRUCTURAL RELAXATION AND ORDER IN ION-IMPLANTED SI AND GE PHYSICAL REVIEW B, 1988, 37 (17): : 10154 - 10158
- [35] Structural evolution in Ar+ implanted Si-rich silicon oxide Journal of Applied Physics, 2003, 94 (12): : 7483 - 7492