Modeling of subthreshold characteristics of deep-submicrometer FD devices

被引：0
|
作者：
Cheng, Bin-Jie [1 ]
Shao, Zhi-Biao [1 ]
Tang, Tian-Tong [1 ]
Shen, Wen-Zhen [1 ]
Zhao, Wen-Kui [1 ]
机构：
[1] Xi'an Jiaotong Univ., Xi'an 710049, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2001年 / 22卷 / 07期
关键词：
Leakage currents - Mathematical models - Semiconducting films - Semiconducting silicon compounds - Threshold voltage;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A third-order quasi-cubic silicon film potential function in the vertical direction is assumed for FD-SOI device, and the surface potential formula is obtained via solving the two-dimensional Poisson equation in the subthreshold region. The surface potential model in the deep-submicrometer FD device is presented by introducing some new parameters to describe the DIBL effect. Based on it, a drain current model in the subthreshold region is developed, which can predict the accurate sub-threshold drain current characteristics. The models are verified by comparing with the two-dimensional device simulator, MEDICI.
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页码：908 / 914
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