Scaling limit of silicon nitride gate dielectric for future CMOS technologies

被引:0
|
作者
机构
[1] Yeo, Yee Chia
[2] Lu, Qiang
[3] Lee, Wen-Chin
[4] King, Tsu-Jae
[5] Hu, Chenming
来源
Yeo, Yee Chia | 2000年 / IEEE, Piscataway, NJ, United States卷
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Dual-metal gate CMOS technology with ultrathin silicon nitride gate dielectric
    Yeo, YC
    Lu, Q
    Ranade, P
    Takeuchi, H
    Yang, KJ
    Polishchuk, I
    King, TJ
    Hu, C
    Song, SC
    Luan, HF
    Kwong, DL
    IEEE ELECTRON DEVICE LETTERS, 2001, 22 (05) : 227 - 229
  • [2] Two silicon nitride technologies for post-SiO2 MOSFET gate dielectric
    Lu, Q
    Yeo, YC
    Yang, KJ
    Lin, R
    Polishchuk, I
    King, TJ
    Hu, CM
    Song, SC
    Luan, HF
    Kwong, DL
    Guo, X
    Luo, ZJ
    Wang, XW
    Ma, TP
    IEEE ELECTRON DEVICE LETTERS, 2001, 22 (07) : 324 - 326
  • [3] Silicon nitride gate dielectric for advanced technology
    Tseng, HH
    1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, 1998, : 279 - 282
  • [4] Ultra-thin silicon nitride gate dielectric for deep-sub-micron CMOS devices
    Khare, M
    Guo, X
    Wang, XW
    Ma, TP
    Cui, GJ
    Tamagawa, T
    Halpern, BL
    Schmitt, JJ
    1997 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERS, 1997, : 51 - 52
  • [5] Vertical Transistor with Ultrathin Silicon Nitride Gate Dielectric
    Moradi, Maryam
    Nathan, Arokia
    Haverinen, Hanna M.
    Jabbour, Ghassan E.
    ADVANCED MATERIALS, 2009, 21 (44) : 4505 - +
  • [6] Silicon nitride as top gate dielectric for epitaxial graphene
    Wehrfritz, Peter
    Fromm, Felix
    Malzer, Stefan
    Seyller, Thomas
    SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 149 - +
  • [7] Development of silicon nitride films for gate dielectric applications
    Brady, D
    Watt, VHC
    Karamcheti, A
    Bersuker, G
    Kim, S
    Vishnubhotla, L
    Zietzoff, P
    Gilmer, M
    Guan, J
    Torres, K
    Nguyen, B
    Williamson, G
    Brown, G
    Gale, G
    Jackson, M
    Huff, HR
    SILICON NITRIDE AND SILICON DIOXIDE THIN INSULATING FILMS, 1999, 99 (06): : 207 - 218
  • [8] Making silicon nitride film a viable gate dielectric
    Ma, TP
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (03) : 680 - 690
  • [9] Single wafer CVD of silicon nitride for CMOS gate applications
    Pomarede, C
    Werkhoven, C
    Weidmann, J
    Bergman, T
    Gschwandtner, A
    Houssa, M
    ULTRATHIN SIO2 AND HIGH-K MATERIALS FOR ULSI GATE DIELECTRICS, 1999, 567 : 147 - 154
  • [10] A NOVEL-APPROACH TO SILICON GATE CMOS DEVICE SCALING
    KING, JH
    SOLID-STATE ELECTRONICS, 1983, 26 (09) : 879 - &