A NOVEL-APPROACH TO SILICON GATE CMOS DEVICE SCALING

被引：0
|
作者：
KING, JH
机构：
来源：
SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 09期
关键词：
D O I：
10.1016/0038-1101(83)90059-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：879 / &
相关论文
共 50 条
  • [1] A NOVEL-APPROACH TO THE SYNTHESIS OF SILICON NANOPARTICLES
    BLEY, RA
    KAUZLARICH, SM
    LEE, HWH
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1995, 210 : 708 - INOR
  • [2] The impact of device scaling and power supply change on CMOS gate performance
    Chen, K
    Wann, HC
    Ko, PK
    Hu, CM
    IEEE ELECTRON DEVICE LETTERS, 1996, 17 (05) : 202 - 204
  • [3] Scaling limit of silicon nitride gate dielectric for future CMOS technologies
    Yeo, Yee Chia, 2000, IEEE, Piscataway, NJ, United States
  • [4] CMOS Gate Height Scaling
    Ren, Zhibin
    Schonenberg, K. T.
    Ontalus, V.
    Lauer, I.
    Butt, S. A.
    2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4, 2008, : 41 - +
  • [5] NOVEL-APPROACH TO HIGH-SPEED CMOS CURRENT COMPARATORS
    TRAFF, H
    ELECTRONICS LETTERS, 1992, 28 (03) : 310 - 312
  • [6] A NOVEL-APPROACH
    WILSON, K
    MICROWAVES & RF, 1987, 26 (07) : 13 - 13
  • [7] OPTIMIZED SCALING - A NOVEL-APPROACH TO LINEAR CALIBRATION WITH CLOSED DATA SETS
    KARSTANG, TV
    MANNE, R
    CHEMOMETRICS AND INTELLIGENT LABORATORY SYSTEMS, 1992, 14 (1-3) : 165 - 173
  • [8] A NOVEL-APPROACH
    FOTI, SJ
    MICROWAVES & RF, 1987, 26 (12) : 13 - 13
  • [9] A novel CMOS compatible stacked floating gate device using TiN as a control gate
    OConnor, KJ
    Mansfield, WM
    Bude, JD
    Cerullo, M
    Klemens, F
    Kornblit, A
    Mastrapasqua, M
    Weber, GR
    Tai, WW
    1997 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERS, 1997, : 61 - 62
  • [10] CMOS devices - Device scaling
    Chan, M.
    Inoue, Y.
    Technical Digest - International Electron Devices Meeting, 2000,
12345