End-point detection of reactive ion etching by plasma impedance monitoring

被引：0
|
作者：
Kanoh, M. [1 ]
Yamage, M. [1 ]
Takada, H. [1 ]
机构：
[1] Corporate Mfg. Engineering Center, Toshiba Corporation, 33, Shin-Isogo-cho, Isogo-ku, Yokohama 235-0017, Japan
来源：
| 1600年 / Japan Society of Applied Physics卷 / 40期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Performance Evaluation of CNN-Based End-Point Detection Using In-Situ Plasma Etching Data
    Kim, Bobae
    Im, Sungbin
    Yoo, Geonwook
    ELECTRONICS, 2021, 10 (01) : 1 - 13
  • [22] ENDPOINT DETERMINATION OF ALUMINUM REACTIVE ION ETCHING BY DISCHARGE IMPEDANCE MONITORING
    UKAI, K
    HANAZAWA, K
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 385 - 387
  • [23] LASER ETCHING UNIFORMITY AND END-POINT DETECTOR.
    Anon
    IBM technical disclosure bulletin, 1986, 29 (04): : 1799 - 1801
  • [24] SENSITIVE PLASMA-ETCHING END-POINT DETECTION USING TUNABLE DIODE-LASER ABSORPTION-SPECTROSCOPY
    SUN, HC
    PATEL, V
    SINGH, B
    NG, CK
    WHITTAKER, EA
    APPLIED PHYSICS LETTERS, 1994, 64 (21) : 2779 - 2781
  • [25] Reactive ion etching with end point detection of microstructured Mo/Si multilayers by optical emission spectroscopy
    Dreeskornfeld, L
    Segler, R
    Haindl, G
    Wehmeyer, O
    Rahn, S
    Majkova, E
    Kleineberg, U
    Heinzmann, U
    Hudek, P
    Kostic, I
    MICROELECTRONIC ENGINEERING, 2000, 54 (3-4) : 303 - 314
  • [26] Use of laser reflectometry for end-point detection during the etching of magnetic thin films
    Khamsehpour, B
    Wilkinson, CDW
    Chapman, JN
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1997, 15 (04): : 2069 - 2073
  • [27] Hierarchical control of end-point impedance and joint impedance for redundant manipulators
    Tsuji, T
    Jazidie, A
    Kaneko, M
    IEEE TRANSACTIONS ON SYSTEMS MAN AND CYBERNETICS PART A-SYSTEMS AND HUMANS, 1999, 29 (06): : 627 - 636
  • [28] IN-SITU PREDICTION OF REACTIVE ION ETCH END-POINT USING NEURAL NETWORKS
    BAKER, MD
    HIMMEL, CD
    MAY, GS
    IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY PART A, 1995, 18 (03): : 478 - 483
  • [29] END-POINT DETERMINATION BY REFLECTED POWER MONITORING
    FORTUNATO, G
    JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1987, 20 (08): : 1051 - 1052
  • [30] In situ monitoring of uniformity by end point signal during plasma etching
    Martisovits, V
    Kosinar, I
    Trnovec, J
    Zahoran, M
    CZECHOSLOVAK JOURNAL OF PHYSICS, 1998, 48 (10) : 1225 - 1239
12345