ENDPOINT DETERMINATION OF ALUMINUM REACTIVE ION ETCHING BY DISCHARGE IMPEDANCE MONITORING

被引:44
|
作者
UKAI, K
HANAZAWA, K
机构
来源
关键词
ETCHING - Monitoring - SEMICONDUCTING SILICON - Metallization;
D O I
10.1116/1.569956
中图分类号
O59 [应用物理学];
学科分类号
摘要
In reactive ion etching, it is found that CCl//4 discharge impedance is reduced during aluminum etching and changes markedly at the final aluminum interface. This phenomenon was monitored by measuring the target electrode voltage with a 2-in. aluminium-coated Si wafer. This measurement is compared with the 261. 6-nm Al-Cl optical emission spectrum and verified with SEM photographs of the etched wafer. As a result the end points detected by these two methods are consistent with each other and discharge impedance monitoring is applicable as an in-process monitoring method.
引用
收藏
页码:385 / 387
页数:3
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