APPARATUS FOR REACTIVE ION ETCHING IN MAGNETRON DISCHARGE

被引:0
|
作者
KIZIITOV, KM
KORZH, IA
VOLYNKIN, AA
机构
关键词
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:507 / 509
页数:3
相关论文
共 50 条
  • [1] CHARACTERIZATION OF A SPLIT CATHODE MAGNETRON REACTIVE ION ETCHING APPARATUS
    BOBBIO, S
    HO, Y
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C437 - C437
  • [2] HIGH-SPEED REACTIVE ION ETCHING USING A MAGNETRON DISCHARGE
    HORIIKE, Y
    OKANO, H
    JAPAN ANNUAL REVIEWS IN ELECTRONICS COMPUTERS & TELECOMMUNICATIONS, 1984, 13 : 249 - &
  • [3] HIGH-RATE REACTIVE ION ETCHING USING A MAGNETRON DISCHARGE
    OKANO, H
    YAMAZAKI, T
    HORIIKE, Y
    SOLID STATE TECHNOLOGY, 1982, 25 (04) : 166 - 170
  • [4] MAGNETRON REACTIVE ION ETCHING OF GAAS IN A BCL3 DISCHARGE
    MCLANE, GF
    MEYYAPPAN, M
    LEE, HS
    COLE, MW
    ECKART, DW
    LAREAU, RT
    NAMAROFF, M
    SASSERATH, J
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (02): : 333 - 336
  • [5] ION-BEAM ENHANCED MAGNETRON REACTIVE ION ETCHING
    CHINN, JD
    APPLIED PHYSICS LETTERS, 1987, 51 (24) : 2007 - 2009
  • [6] HIGH-RATE REACTIVE ION ETCHING OF SIO2 USING A MAGNETRON DISCHARGE
    HORIIKE, Y
    OKANO, H
    YAMAZAKI, T
    HORIE, H
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) : L817 - L820
  • [8] NOVEL STATIC MAGNETRON TRIODE REACTIVE ION ETCHING
    SATO, M
    ARITA, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1992, 31 (6B): : 1993 - 1998
  • [9] MAGNETRON-ENHANCED REACTIVE ION ETCHING.
    Grebe, K.R.
    Palmer, M.J.
    Yeh, J.T.
    IBM technical disclosure bulletin, 1983, 26 (7 B): : 3848 - 3851
  • [10] CHARGE BUILDUP IN MAGNETRON-ENHANCED REACTIVE ION ETCHING
    HOGA, H
    ORITA, T
    YOKOYAMA, T
    HAYASHI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (11B): : 3169 - 3173