共 50 条
- [2] HIGH-SPEED REACTIVE ION ETCHING USING A MAGNETRON DISCHARGE JAPAN ANNUAL REVIEWS IN ELECTRONICS COMPUTERS & TELECOMMUNICATIONS, 1984, 13 : 249 - &
- [4] MAGNETRON REACTIVE ION ETCHING OF GAAS IN A BCL3 DISCHARGE JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (02): : 333 - 336
- [8] NOVEL STATIC MAGNETRON TRIODE REACTIVE ION ETCHING JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1992, 31 (6B): : 1993 - 1998
- [9] MAGNETRON-ENHANCED REACTIVE ION ETCHING. IBM technical disclosure bulletin, 1983, 26 (7 B): : 3848 - 3851
- [10] CHARGE BUILDUP IN MAGNETRON-ENHANCED REACTIVE ION ETCHING JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (11B): : 3169 - 3173