End-point detection of reactive ion etching by plasma impedance monitoring

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作者：
Kanoh, M. [1 ]
Yamage, M. [1 ]
Takada, H. [1 ]
机构：
[1] Corporate Mfg. Engineering Center, Toshiba Corporation, 33, Shin-Isogo-cho, Isogo-ku, Yokohama 235-0017, Japan
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| 1600年 / Japan Society of Applied Physics卷 / 40期
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