Single Event Transient tolerant Count Min Sketches

被引:0
|
作者
Zhu, Jinhua [1 ]
Jin, Jie [1 ]
Gao, Zhen [1 ]
Reviriego, Pedro [2 ]
机构
[1] Tianjin University, Tianjin,300072, China
[2] Universidad Carlos III de Madrid, Av. Universidad 30, Leganés,Madrid, Spain
基金
中国国家自然科学基金;
关键词
Data handling - Redundancy - Digital storage - Big data - Fault tolerance - Radiation hardening - Computation theory - High electron mobility transistors - Transients;
D O I
暂无
中图分类号
学科分类号
摘要
Frequency estimation is a common operation in big data processing. In many big data applications, computing the exact data frequency is not practical as it requires a large computational effort. Instead, a reasonably accurate estimate is commonly used. The Count Min Sketch (CMS) is a popular method for frequency estimation due to its simple implementation and low memory requirements. However, Single Event Transients (SETs) can affect the logic functions of the CMS. Based on our previous research, nearly half of the SETs will lead to CMS estimation errors in the worst case. Moreover, the most frequent elements are more likely to be underestimated when SETs occur, which is not acceptable in practice. Therefore, this paper proposes several fault-tolerant schemes to protect the CMS against SETs, especially to avoid underestimation. In particular, space redundancy-based schemes and partial time redundancy-based schemes are proposed, and the probabilities for underestimation and overestimation are analyzed theoretically. Experiments are performed to compare the reliability of the CMS protected by different schemes and validate the theoretical predictions. Finally, the selection of the best CMS parameters for practical applications is discussed with a comprehensive analysis of the overhead and performance of the different protection schemes. © 2022 Elsevier Ltd
引用
收藏
相关论文
共 50 条
  • [31] Single Event Induced Double Node Upset Tolerant Latch
    Namba, Kazuteru
    Sakata, Masatoshi
    Ito, Hideo
    2010 IEEE 25TH INTERNATIONAL SYMPOSIUM ON DEFECT AND FAULT TOLERANCE IN VLSI SYSTEMS (DFT 2010), 2010, : 280 - 288
  • [32] Single Event Transient Event Frequency Prediction Model for a Next Generation PLL
    Hafer, C.
    Pfeil, J.
    Bass, D.
    Jordan, A.
    Farris, T.
    NSRE: 2008 IEEE RADIATION EFFECTS DATA WORKSHOP, WORKSHOP RECORD, 2008, : 85 - 89
  • [33] Buffered Count-Min Sketch
    Eydi, Ehsan
    Medjedovic, Dzejla
    Mekic, Emina
    Selmanovic, Elmedin
    ADVANCED TECHNOLOGIES, SYSTEMS, AND APPLICATIONS II, 2018, 28 : 249 - 255
  • [34] Single event transient propagation through digital optocouplers
    Adell, PC
    Mion, O
    Schrimpf, RD
    Chatry, C
    Calvel, P
    Melotte, MR
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2005, 52 (04) : 1136 - 1139
  • [35] Research of bipolar amplification effect in single event transient
    Liu Zheng
    Chen Shu-Ming
    Liang Bin
    Liu Bi-Wei
    Zhao Zhen-Yu
    ACTA PHYSICA SINICA, 2010, 59 (01) : 649 - 654
  • [36] Single-Event Transient in FinFETs and Nanosheet FETs
    Kim, Jungsik
    Lee, Jeong-Soo
    Han, Jin-Woo
    Meyyappan, M.
    IEEE ELECTRON DEVICE LETTERS, 2018, 39 (12) : 1840 - 1843
  • [37] Towards a single event transient hardness assurance methodology
    Marec, R
    Chatry, C
    Adell, P
    Mion, O
    Barillot, C
    Calvel, P
    Cresciucci, L
    2001 6TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS, 2002, : 343 - 350
  • [38] Single Event Transient Suppressor for Flip-Flops
    She, Xiaoxuan
    Li, N.
    Carlson, R. Mariad
    Erstad, D. Oliswy
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2010, 57 (04) : 2344 - 2348
  • [39] Propagation induced pulse broadening of single event transient
    Liang, Bin
    Chen, Shuming
    Liu, Biwei
    Liu, Zheng
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2008, 29 (09): : 1827 - 1831
  • [40] Single-Event Transient Response of InGaAs MOSFETs
    Ni, Kai
    Zhang, En Xia
    Hooten, Nicholas C.
    Bennett, William G.
    McCurdy, Michael W.
    Sternberg, Andrew L.
    Schrimpf, Ronald D.
    Reed, Robert A.
    Fleetwood, Daniel M.
    Alles, Michael L.
    Kim, Tae-Woo
    Lin, Jianqiang
    del Alamo, Jesus A.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2014, 61 (06) : 3550 - 3556