High-precision single-event transient hardened comparator with the sensitive node transient detection feedback latch technique

被引:0
|
作者
Xie, Yuqiao [1 ,2 ]
Xu, Tao [1 ,2 ]
Liu, Zhongyang [1 ,2 ]
Qiu, Guoji [1 ,2 ]
Bi, Dawei [1 ]
Hu, Zhiyuan [1 ]
Zhang, Zhengxuan [1 ]
Zou, Shichang [1 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Mat Integrated Circuits, 865 Changning Rd, Shanghai 200050, Peoples R China
[2] Univ Chinese Acad Sci, Beijing, Peoples R China
关键词
analog; comparator; radiation hardening; single-event transient (SET); sensitive node transient detection feedback latch (SNTDFL); triple modular redundancy (TMR); ANALOG; CHARGE; ION; COLLECTION; DESIGN; UPSETS; IMPACT; ICS;
D O I
10.1002/cta.4187
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper comprehensively perfects the sensitive node transient detection feedback latch (SNTDFL) technique, subsequently conceptualizes an ideal hardening structure for the pre-amplification stage, and proposes a radiation hardened by design (RHBD) strategy to cope with the severe single-event transient (SET) effects of high-precision voltage comparators in a space radiation environment. Analysis and verification results show that the hardening strategy exhibits excellent SET hardening performance, which can not only detect extremely small transient voltage disturbances at sensitive nodes but also effectively resist transient current pulses of various intensities generated by SETs. Compared with an unhardened high-precision comparator, the proposed one, hardened with a hybrid strategy of SNTDFL and triple modular redundancy (TMR) techniques, can greatly preserve the original electrical properties and remarkably improve the tolerance of SET with little overhead. In addition, the proposed high-precision comparator significantly reduces static power consumption compared with the one hardened with the TMR technique alone and has a smaller area overhead. This paper comprehensively perfects the sensitive node transient detection feedback latch (SNTDFL) technique, conceptualizes an ideal hardening structure for the pre-amplification stage, and proposes a high-precision comparator hardened with a hybrid strategy of SNTDFL and triple modular redundancy (TMR) techniques. This strategy not only greatly preserves the electrical characteristics but also detects extremely small transient voltage disturbances caused at sensitive nodes and effectively resists transient current pulses of various intensities, remarkably improving the comparator's tolerance to SET. image
引用
收藏
页数:14
相关论文
共 50 条
  • [21] Bulk Bias as an Analog Single-Event Transient Mitigation Technique with Negligible Penalty
    Liu, Jingtian
    Sun, Qian
    Liang, Bin
    Chen, Jianjun
    Chi, Yaqing
    Guo, Yang
    ELECTRONICS, 2020, 9 (01)
  • [22] Simultaneous Single-Event Transient (SET) Observation on LM139A Wired-and Comparator Circuit
    Morand, S.
    Binois, C.
    de Fleurieu, H. Claret
    Carvalho, A.
    Samaras, A.
    Clatworthy, T.
    Kruckmeyer, K.
    Marin, M.
    Mangeret, R.
    Salvaterra, G.
    Staerk, D.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 68 (06) : 1279 - 1285
  • [23] Soft Error Tolerant Bandgap Reference Utilizing Single-Event Transient Filtering Technique
    Liu, Jingtian
    Wang, Dongsheng
    Liang, Bin
    Chi, Yaqing
    Luo, Deng
    Xu, Shi
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2024, 71 (04) : 895 - 901
  • [24] Single-Event Transient Error Characterization of a Radiation-Hardened by Design 90 nm SerDes Transmitter Driver
    Armstrong, S. E.
    Olson, B. D.
    Popp, J.
    Braatz, J.
    Loveless, T. D.
    Holman, W. T.
    McMorrow, D.
    Massengill, L. W.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2009, 56 (06) : 3463 - 3468
  • [25] Analyzing and mitigating the internal single-event transient in radiation hardened flip-flops at circuit-level
    Bin Liang
    RuiQiang Song
    Science China Technological Sciences, 2014, 57 : 1834 - 1839
  • [26] A NEW BULK BUILT-IN CURRENT SENSING CIRCUIT FOR SINGLE-EVENT TRANSIENT DETECTION
    Zhang, Zhichao
    Wang, Tao
    Chen, Li
    Yang, Jinsheng
    2010 23RD CANADIAN CONFERENCE ON ELECTRICAL AND COMPUTER ENGINEERING (CCECE), 2010,
  • [27] Analyzing and mitigating the internal single-event transient in radiation hardened flip-flops at circuit-level
    Liang Bin
    Song RuiQiang
    SCIENCE CHINA-TECHNOLOGICAL SCIENCES, 2014, 57 (09) : 1834 - 1839
  • [28] Analyzing and mitigating the internal single-event transient in radiation hardened flip-flops at circuit-level
    LIANG Bin
    SONG RuiQiang
    Science China(Technological Sciences), 2014, (09) : 1834 - 1839
  • [29] Analyzing and mitigating the internal single-event transient in radiation hardened flip-flops at circuit-level
    LIANG Bin
    SONG RuiQiang
    Science China(Technological Sciences), 2014, 57 (09) : 1834 - 1839
  • [30] A Single-Event Transient Radiation Hardened Low-Dropout Regulator for LC Voltage-Controlled Oscillator
    Chen, Xi
    Guo, Qiancheng
    Yuan, Hengzhou
    Guo, Yang
    SYMMETRY-BASEL, 2022, 14 (04):