Silicon Differential Photodetectors. Technology, Characteristics, Application

A silicon-based photodetector containing two identical n+-p-photodiodes is described. One of the photodiodes had a wide spectral response with high sensitivity in the ultraviolet region. The sensitivity of the second was reduced in the short-wavelength part of the spectrum by creating additional recombination centers in the near-surface region by implanting As ions. The spectral sensitivity of the differential signal obtained by subtracting photocurrents had a pronounced short-wavelength characteristic. The long-wavelength limit of the spectral range in terms of the lambda 0.5 level, depending on the doping dose, was in the range of 0.37-0.47 mu m. The sensitivity maximum corresponded to lambda max = 0.32-0.37 mu m. The electrical and noise characteristics of the photodetector are given. The possibility of using differential photodetectors as two-color ones is shown.