Germanium photodetectors on Silicon-on-insulator grown with differential molecular beam epitaxy in silicon wells

被引：3

作者：

Kaschel, M. ^{[1
]}

Schmid, M. ^{[1
]}

Oehme, M. ^{[1
]}

Werner, J. ^{[1
]}

Schulze, J. ^{[1
]}

机构：

[1] Univ Stuttgart, Inst Halbleitertech, D-70569 Stuttgart, Germany

来源：

SOLID-STATE ELECTRONICS | 2011年 / 60卷 / 01期

关键词：

Germanium; Photodetector; Pin; Differential molecular beam epitaxy; SOI; Optical responsivity; WAVE-GUIDE PHOTODETECTORS; GE;

D O I：

10.1016/j.sse.2011.01.048

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we propose a method for growing fast Germanium pin photodetectors in pre-patterned areas on a Silicon-on-insulator substrate. The layers are deposited by means of molecular beam epitaxy and structured by chemical mechanical polishing. A comparison of the electrical and optical characteristics between a photodetector grown with the proposed method and a reference detector grown on a planar Silicon substrate is made indicating only minor differences. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：105 / 111

页数：7

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