SILICON LAYERS GROWN BY DIFFERENTIAL MOLECULAR-BEAM EPITAXY

被引：19
|
作者：
HERZOG, HJ
KASPER, E
机构：
[1] AEG-Telefunken Forschungsinstitut, Ulm, West Ger, AEG-Telefunken Forschungsinstitut, Ulm, West Ger
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 09期
关键词：
D O I：
10.1149/1.2114325
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
SEMICONDUCTING SILICON
引用
收藏
页码：2227 / 2231
页数：5
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