Germanium photodetectors on Silicon-on-insulator grown with differential molecular beam epitaxy in silicon wells

被引：3
|
作者：
Kaschel, M. [1 ]
Schmid, M. [1 ]
Oehme, M. [1 ]
Werner, J. [1 ]
Schulze, J. [1 ]
机构：
[1] Univ Stuttgart, Inst Halbleitertech, D-70569 Stuttgart, Germany
来源：
SOLID-STATE ELECTRONICS | 2011年 / 60卷 / 01期
关键词：
Germanium; Photodetector; Pin; Differential molecular beam epitaxy; SOI; Optical responsivity; WAVE-GUIDE PHOTODETECTORS; GE;
D O I：
10.1016/j.sse.2011.01.048
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we propose a method for growing fast Germanium pin photodetectors in pre-patterned areas on a Silicon-on-insulator substrate. The layers are deposited by means of molecular beam epitaxy and structured by chemical mechanical polishing. A comparison of the electrical and optical characteristics between a photodetector grown with the proposed method and a reference detector grown on a planar Silicon substrate is made indicating only minor differences. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码：105 / 111
页数：7
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