ESD Robustness of Germanium Photodetectors in Advanced Silicon Photonics Technology

被引：0

作者：

Chen, Shih-Hung ^{[1
]}

Fu, P-Y ^{[1
,2
]}

Tsiara, A. ^{[1
]}

Van De Peer, M. ^{[1
]}

Simicic, M. ^{[1
]}

Musibau, S. ^{[1
,3
]}

Ban, Y. ^{[1
]}

Kao, K. H. ^{[1
,2
]}

Chen, W-C ^{[1
]}

Serbulova, K. ^{[1
,3
]}

Van Campenhout, J. ^{[1
]}

Absil, Ph ^{[1
]}

Croes, K. ^{[1
,3
]}

机构：

[1] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

[2] Natl Cheng Kung Univ, Tainan, Taiwan

[3] Katholieke Univ Leuven, Leuven, Belgium

来源：

2024 46TH ANNUAL EOS/ESD SYMPOSIUM, EOS/ESD 2024 | 2024年

关键词：

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

A comprehensive ESD robustness study of 5 different Ge photodetectors in advanced Si photonic technology is presented. The measurement results disclose that the main impact on the ESD transient IV characteristics is from the contact location of the anode terminal. Still, the failure mechanisms need to be further clarified by physical failure analysis as a part of the future work.

引用

页数：7

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