THE OPTIMIZATION OF THE SPECIFIC ON-RESISTANCE OF THE VDMOS ON THE INTEGRATED PLATFORM OF VDMOS AND LDMOS

被引：0
|
作者：
Cai, Xiaoqing [1 ]
Chen, Yuncong [1 ]
Liu, Donghua [1 ]
Qian, Wensheng [1 ]
机构：
[1] HuaHong Grace Semicond Mfg Corp, Shanghai 201206, Peoples R China
来源：
CONFERENCE OF SCIENCE & TECHNOLOGY FOR INTEGRATED CIRCUITS, 2024 CSTIC | 2024年
关键词：
Integrated Platform; VDMOS; Rsp;
D O I：
10.1109/CSTIC61820.2024.10532086
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
As is known to all, the operation modes of vertical double-diffused MOS (VDMOS) and lateral double-diffused MOS (LDMOS) are completely different, so retaining performance of the VDMOS will be difficult to deal with the new platform due to variant working modes. A way of optimizing the key performance, specific on-resistance (Rsp) of the vertical double-diffused MOS (VDMOS) on the integrated platform is proposed in this letter. The Rsp of VDMOS is optimized by implanting impurity and long thermal process which is engaged in the platform. The T-CAD simulation and experiments results indicate that the performance of VDMOS is retained successfully.
引用
收藏
页数：3
相关论文
共 50 条
  • [21] An LDMOS with large SOA and low specific on-resistance
    杜文芳
    吕信江
    陈星弼
    Journal of Semiconductors, 2016, (05) : 56 - 59
  • [22] The Trench Power MOSFET-Part II: Application Specific VDMOS, LDMOS, Packaging, and Reliability
    Williams, Richard K.
    Darwish, Mohamed N.
    Blanchard, Richard A.
    Siemieniec, Ralf
    Rutter, Phil
    Kawaguchi, Yusuke
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (03) : 692 - 712
  • [23] Design and Simulation Optimization of an Ultra-Low Specific On-Resistance LDMOS Device
    Yu, Shaoxin
    Shao, Weiheng
    Chen, Rongsheng
    Zhang, Rilin
    Liu, Xiaoqing
    Wu, Yongjun
    Zhao, Bin
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2024, 12 : 14 - 22
  • [24] Integrated VDMOS transistor with reduced JFET effect
    Hakim, Hedi
    Bolognesi, Davide
    De Pestel, Freddy
    ESSDERC 2006: PROCEEDINGS OF THE 36TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2006, : 278 - +
  • [25] Towards ultimate scaling of LDMOS with Ultralow Specific On-resistance
    Mehrotra, Saumitra
    Radic, Ljubo
    Grote, Bernhard
    Saxena, Tanuj
    Qin, Ganming
    Khemka, Vishnu
    Thomas, Tania
    Gibson, Mark
    PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020), 2020, : 42 - 45
  • [26] Optimization of the specific on-resistance of the COOLMOS™
    Chen, XB
    Sin, JKO
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (02) : 344 - 348
  • [27] Optimization of High Reliability and Wide SOA 100 V LDMOS Transistor with Low Specific On-Resistance
    Kuwana, Anna
    Matsuda, Jun-ichi
    Kobayashi, Haruo
    2019 IEEE 13TH INTERNATIONAL CONFERENCE ON ASIC (ASICON), 2019,
  • [28] A Novel LDMOS with Ultralow Specific on-Resistance and Improved Switching Performance
    Lijuan Wu
    Haifeng Wu
    Jinsheng Zeng
    Xing Chen
    Shaolian Su
    Silicon, 2022, 14 : 5983 - 5991
  • [29] A Novel LDMOS with Ultralow Specific on-Resistance and Improved Switching Performance
    Wu, Lijuan
    Wu, Haifeng
    Zeng, Jinsheng
    Chen, Xing
    Su, Shaolian
    SILICON, 2022, 14 (11) : 5983 - 5991
  • [30] Optimization of the specific on-resistance of the COOLMOSTM
    Chen, Xing-Bi
    Sin, Johnny K.O.
    2001, IEEE, Piscataway, NJ, United States (48)
12345