Dual Gate HEMT: Compact Cascode for Low-Noise Amplification

被引：0

作者：

Bonomo, Giorgio ^{[1
]}

Ciabattini, Filippo ^{[1
]}

Saranovac, Tamara ^{[1
]}

Kostelac, Fran ^{[1
]}

Hamzeloui, Sara ^{[1
]}

Marti, Diego ^{[1
]}

Fluckiger, Ralf ^{[1
]}

Ostinelli, Olivier J. S. ^{[1
]}

Bolognesi, Colombo R. ^{[1
]}

机构：

[1] D ITET ETHZ, Millimeter Wave Elect Grp, Zurich, Switzerland

来源：

2024 15TH GLOBAL SYMPOSIUM ON MILLIMETER-WAVES & TERAHERTZ, GSMM | 2024年

关键词：

High Electron Mobility Transistor (HEMT); low-noise; associated gain; cascade; dual gate;

D O I：

10.1109/GSMM61775.2024.10553216

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The present work compares single-gate (SG) and dual-gate (DG) HEMTs from a low-noise amplification perspective. Experimental results, obtained through RF and noise measurements in the 5 to 50 GHz range, reveal a significant boost of similar to 6 dB in the associated gain for the DG-HEMT compared to the conventional SG-HEMT. The biasing characteristics of the DG-HEMT offer an additional degree of freedom, relaxing the traditionally rigid constraints on the relationship between minimum noise figure and gain.

引用

页码：234 / 236

页数：3

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